EE-SY1200

Omron
Датчик положения оптический - Режим: отражение; Выход: фототранзистор; ; Примечания: SENSOR PHOTO ULTRA COMP SMD
развернуть ▼ свернуть ▲
 

Технические характеристики

показать свернуть
Режим работы
Тип выхода
Примечания
Нашли ошибку? Выделите её курсором и нажмите CTRL + ENTER

Файлы 1

показать свернуть
CSM_EE-SY1200_E_1_1 EE-SY1200 Photomicrosensor (Reflective) ■ Dimensions Detector center (Unit: mm) Emitter center 1.9 (0.7) (1) (0.8) (0.8) 3.2 Note. Unless otherwise specified tolerances are ±0.15. No burrs dimensions are included in outline dimensions. The burrs dimensions are 0.15 MAX. Diagonal line indicate the region is part Au plating area. ■ Features • Ultra-compact model. • PCB surface mounting type. • High S/N ratio (High light current / Low leakage current) ■ Absolute Maximum Ratings (Ta=25°C) Item Recommended Soldering Pattern 1.1 E 2-1 2-1.7 2-1 K 1.2 2-0.65 2-0.45 2-0.65 0.7 C A Terminal No. A Emitter Note 1. The shaded portion in the above figure may cause shorting. Do not wire in this portion. 2. The dimensional tolerance for the recommended soldering pattern is ±0.1 mm. Name Internal Circuit Anode K Cathode C Collector E Emitter Detector C A E K Symbol Rated value Unit Forward current IF 50*1 mA Pulse forward current IFP 500*2 mA Reverse voltage VR 4 V Collector-Emitter voltage VCEO 30 V Emitter-Collector voltage VECO 5 V Collector current IC 20 mA Collector dissipation PC 50*1 mW Operating temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C Reflow soldering temperature Tsol 240*3 °C *1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. *2. The pulse width is 10 μs maximum with a frequency of 100 Hz. *3. Complete soldering within 10 seconds for reflow soldering. ■ Electrical and Optical Characteristics (Ta=25°C) Value Item Symbol Unit MIN. TYP. MAX. Condition Forward voltage VF --- 1.2 1.4 V IF = 20 mA Reverse current IR --- --- 10 μA VR = 4 V Peak emission wavelength λP --- 940 --- nm --- Light current 1 I L1 200 --- 1000 μA Light current 2 I L2 150 --- --- μA IF = 10 mA, VCE = 2 V, Aluminumdeposited surface, d = 4 mm*1 IF = 4 mA, VCE = 2 V, Aluminum-deposited surface, d = 1 mm*1 ID --- 2 200 nA VCE = 10 V, 0 lx Detector Leakage current 1 I LEAK1 --- --- 500 nA Leakage current 2 I LEAK2 --- --- 200 nA VCE (sat) --- --- --- V --- λP --- 850 --- nm --- Rising time tr --- 30 --- μs Falling time tf --- 30 --- μs VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1 VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1 Emitter Dark current Collector-Emitter saturated voltage Peak spectral sensitivity wavelength IF = 10 mA, VCE = 2 V, with no reflection*2 IF = 4 mA, VCE = 2 V, with no reflection*2 *1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object. *2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which is reflected from surroundings of the Photomicrosensor and /or the background object. Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use. 1 PDF
Документация EE-SY1200 

CSM_EE-SY1200_E_1_1

Дата модификации: 26.10.2010

Размер: 288.8 Кб

4 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.

    KTIR0611S (KGB)