Технические характеристики

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Корпус DO214AC
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Тип супрессора по свойствам
Количество линий ограничения
Примечание TVS DIODE 10VWM SMD General Purpose
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Аналоги 8

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
P= SMAJ10CA (LTL) DO214AC в ленте 5000 шт Защитный диод - [DO-214AC, SMA]; Pрасс(пик): 400 Вт; Uраб: 10 В; Uимп(макс): 17 В; Iимп...
P= SMAJ10CA-TR (KINGTRON) DO214AC в ленте 5000 шт
P= SMAJ10CA-TR (ST) DO214AC в ленте 5000 шт
DO-214AA SMB 199 шт Защитный диод - TVS DIODE 10VWM SMD General Purpose
DO-214AB SMC в ленте 3000 шт TVS DIODE 10VWM SMD General Purpose
A- 1.5KE11CA R0G (TSC) DO-201
A- P6KE11CA R0G (TSC) DO-204AC DO-204AC (DO-15)

Файлы 1

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T PL IA N M CO *R oH S Features Applications ■ RoHS compliant* ■ IEC 61000-4-2 ESD (Min. Level 4) ■ Surface Mount SMA package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 495 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 400 watts SMAJ Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AC (SMA) size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown Voltage up to 550 V. Typical fast response times are less than 1.0 picoseconds for unidirectional devices and less than 5.0 picoseconds for bidirectional devices from 0 V to Minimum Breakdown Voltage. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Value Unit Minimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) PPK 400 Watts Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) IFSM 40 Amps PM(AV) 1.0 Watts VF 3.5 5.0 Volts TJ -55 to +150 °C TSTG -55 to +150 °C Steady State Power Dissipation @ TL = 75 °C Maximum Instantaneous Forward Voltage @ IPP = 35 A (For Unidirectional Units Only) SMAJ5.0A ~ SMAJ90A SMAJ100A ~ SMAJ495A Operating Temperature Range Storage Temperature Range 1. 2. 3. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve. Thermal Resistance Junction to Lead. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). How to Order SMAJ 5.0 CA Package SMAJ = SMA/DO-214AC Working Peak Reverse Voltage 5.0 = 5.0 VRWM (Volts) Asia-Pacific: Tel: +886-2 2562-4117 Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 Fax: +1-951 781-5700 Suffix A = 5 % Tolerance Unidirectional Device CA = 5 % Tolerance Bidirectional Device *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. PDF
Документация на серию SMAJ 

Bourns® Chip Diodes SMAJ TVS Diode Series

Дата модификации: 06.04.2015

Размер: 388.3 Кб

5 стр.

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