SMBJ160CA

Технические характеристики

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Корпус DO-214AA SMB
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальный импульсный ток
Тип супрессора по свойствам
Количество линий ограничения
Примечание TVS DIODE 160VWM SMD General Purpose
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Аналоги 19

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
P= SMBJ160CA-E3/52 (VISHAY) DO214AA в ленте 750 шт Защитный диод - Примечание: TRANSIL BI 0,6KW 180V SMB    RoHSconf TRANSIL BI 0,6KW 180V SMB RoHSconf
P= SMBJ160CA-TP (MCC) DO-214AA SMB Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
P= SMBJ160CA (LTL)
SMBJ160CA (ONS-FAIR)
DO-214AA SMB 3000 шт Защитный диод - [DO-214AA, SMB]; Pрасс(пик): 600 Вт; Uраб: 160 В; Uимп(макс): 259 В; Iи... Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
P= SMBJ160CA (TSC)
SMBJ160CA (ONS-FAIR)
Trans Voltage Suppressor Diode, 600W, 160V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ170CA (BOURNS)
SMBJ170CA (ONS-FAIR)
DO-214AA SMB в ленте 3000 шт Защитный диод - TVS DIODE 170VWM SMD General Purpose
P- SMBJ170CA-13-F (DIODES) DO214AA 1 шт
P- SMBJ160CA-13-F (DIODES) DO214AA 112 шт
P- SMBJ170CA (ST)
SMBJ170CA (ONS-FAIR)
DO-214AA SMB Защитный диод - [DO-214AA]; Pрасс: 5 Вт; Pрасс(пик): 600 Вт; Uраб: 170 В; Uогр(ном): 19...
P- SMBJ170CA (VISHAY)
SMBJ170CA (ONS-FAIR)
DO-214AA SMB
 
Trans Voltage Suppressor Diode, 170V V(RWM), Bidirectional
P- SMBJ170CA (YJ)
SMBJ170CA (ONS-FAIR)
DO214AA 3000 шт
 
Trans Voltage Suppressor Diode, 170V V(RWM), Bidirectional
P- SMBJ170CA-TR (ST) DO214AA в ленте 2500 шт
 
Trans Voltage Suppressor Diode, 4000W, 170V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ160CA (YJ)
SMBJ160CA (ONS-FAIR)
DO214AA 3000 шт
 
Trans Voltage Suppressor Diode, 160V V(RWM), Bidirectional
P- SMBJ170CA (LTL)
SMBJ170CA (ONS-FAIR)
DO-214AA SMB 3000 шт Trans Voltage Suppressor Diode, 600W, 170V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ160CA (GWS)
SMBJ160CA (ONS-FAIR)
 
P- SMBJ170CA (GWS)
SMBJ170CA (ONS-FAIR)
 
P- SMBJ170CA-E3/52 (VISHAY) DO214AA в ленте 750 шт TVS DIODE, 600W, 170V, DO-214AA; Reverse Stand-Off Voltage Vrwm:170V; Breakdown Voltage Range:189V to 209V; Clamping Voltage Vc Max:275V; Diode Configuration:Bidirectional; Peak Pulse Current Ippm:2.2A; Diode Case Style:DO-214AA ;RoHS Compliant: Yes
A- SMLJ160CA (BOURNS) DO214AB 1 шт DIODE, TVS, 160V, 3000W, BI, 5%, SMC TVS DIODE 160VWM SMD General Purpose
A- SMAJ160CA (BOURNS) DO214AA 1 шт TVS DIODE 160VWM SMD General Purpose
A- SMCJ160CA (BOURNS)
SMCJ160CA/TR7 (YAG)
DO-214AB SMC 1 шт TVS DIODE 160VWM SMD General Purpose

Файлы 1

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Features Applications n Surface Mount SMB package n IEC 61000-4-4 EFT n Standoff Voltage: 5 to 495 volts n IEC 61000-4-5 Surge n RoHS compliant* n IEC 61000-4-2 ESD (Min. Level 4) n Power Dissipation: 600 watts SMBJ Transient Voltage Suppressor Diode Series General Information Agency Recognition The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Description UL File Number: E153537 Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB) size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown Voltage up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices from 0 V to Minimum Breakdown Voltage. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Minimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) Steady State Power Dissipation @ TL = 75 °C Maximum Instantaneous Forward Voltage @ IPP = 50 A (For Unidirectional Units Only) Symbol Value Unit PPK 600 Watts IFSM 100 Amps PM(AV) 5.0 Watts VF 3.5 5.0 Volts TJ -55 to +150 °C -55 to +150 °C SMBJ5.0A ~ SMBJ90A SMBJ100A ~ SMBJ495A Operating Temperature Range Storage Temperature Range 1. 2. 3. TSTG Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve. Thermal Resistance Junction to Lead. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). How to Order Asia-Pacific: Tel: +886-2 2562-4117 • Email: asiacus@bourns.com Europe: Tel: +36 88 885 877 • Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 • Email: americus@bourns.com www.bourns.com SMBJ 5.0 CA - H Package SMBJ = SMB/DO-214AA Working Peak Reverse Voltage 5.0 = 5.0 VRWM (Volts) Suffix A = 5 % Tolerance Unidirectional Device CA = 5 % Tolerance Bidirectional Device Reel (blank) = 13 inch reel -H = 7 inch reel WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. PDF
Документация на SMBJ160CA 

SMBJ TVS Diode Series Bourns® Chip Diodes

Дата модификации: 06.03.2020

Размер: 514.9 Кб

6 стр.

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