Технические характеристики

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Корпус DO-214AB SMC
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальный импульсный ток
Тип супрессора по свойствам
Количество линий ограничения
Примечание TVS DIODE 100VWM SMD General Purpose
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Аналоги 4

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
PA SMCJ100CA/TR13 (YAG) DO214AB 30000 шт SMCJ, DO-214AB, 100V, 162V, Reel 13"
DO214AB в ленте 3000 шт Trans Voltage Suppressor Diode, 1500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB
P- 1.5SMCJ100CA (DIOTEC) DO214AB Защитный диод - [DO-214AB]; Pрасс(пик): 1.5 кВт; Uраб: 100 В; Uогр(диапазон): 111...123... Trans Voltage Suppressor Diode, 1500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB
A- 1.5SMCJ90C (DIOTEC) Защитный диод - [DO-214AB]; Pрасс(пик): 1.5 кВт; Uраб: 90 В; Uогр(диапазон): 100...122 ... Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB

Файлы 1

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Features Applications n Surface Mount SMC package n IEC 61000-4-4 EFT n Standoff Voltage: 5.0 to 495 volts n IEC 61000-4-5 Surge n RoHS compliant* n IEC 61000-4-2 ESD (Min. Level 4) n Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series General Information Agency Recognition The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Description UL File Number: E153537 Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC) size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown Voltage up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices from 0 V to Minimum Breakdown Voltage. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Minimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) Steady State Power Dissipation @ TL = 75 °C Maximum Instantaneous Forward Voltage @ IPP = 100 A (For Unidirectional Units Only) Symbol Value Unit PPK 1500 Watts IFSM 200 Amps PM(AV) 5.0 Watts VF 3.5 5.0 Volts TJ -55 to +150 °C -55 to +150 °C SMCJ5.0A ~ SMCJ90A SMCJ100A ~ SMCJ495A Operating Temperature Range Storage Temperature Range 1. 2. 3. TSTG Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve. Thermal Resistance Junction to Lead. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). How to Order Asia-Pacific: Tel: +886-2 2562-4117 • Email: Europe: Tel: +36 88 885 877 • Email: The Americas: Tel: +1-951 781-5500 • Email: SMCJ 5.0 CA - H Package SMCJ = SMC/DO-214AB Working Peak Reverse Voltage 5.0 = 5.0 VRWM (Volts) Suffix A = 5 % Tolerance Unidirectional Device CA = 5 % Tolerance Bidirectional Device Reel (blank) = 13 inch reel -H = 7 inch reel WARNING Cancer and Reproductive Harm - *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at PDF
Документация на SMCJ100CA 

SMCJ TVS Diode Series Bourns® Chip Diodes

Дата модификации: 06.03.2020

Размер: 599.2 Кб

6 стр.

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