CAS480M12HM3

CAS480M12HM3 1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features VDS 1200 V IDS 480 A Package 110mm x 65 mm x 12.2 mm • Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Zero Reverse Recovery from Diodes • Light Wei...
развернуть ▼ свернуть ▲
 

Технические характеристики

показать свернуть
Напряжение сток-исток максимальное
Схема модуля
Максимальный рабочий ток при 25°C
Максимальный рабочий ток при 100°C
Рабочий диапазон напряжений затвора
Сопротивление открытого канала при макс. U затвора
Рабочая температура
Примечание
Нашли ошибку? Выделите её курсором и нажмите CTRL + ENTER

Файлы 1

показать свернуть
CAS480M12HM3 1200 V, 480 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features VDS 1200 V IDS 480 A Package 110mm x 65 mm x 12.2 mm • Low Inductance, Low Profile 62mm Footprint • High Junction Temperature (175 °C) Operation • Implements Switching Optimized Third Generation SiC MOSFET Technology • Zero Reverse Recovery from Diodes • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator V+ G1 K1 Applications • • • • Railway & Traction Solar EV Chargers Industrial Automation & Testing Mid G2 K2 V- System Benefits • Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC • High Reliability Material Selection Key Parameters (TC = 25˚C unless otherwise specified) Symbol Parameter VDS max Drain-Source Voltage VGS max Gate-Source Voltage, Maximum Value -8 +19 VGS op Gate-Source Voltage, Recommended Op. Value -4 +15 Typ. Max. Unit Test Conditions V Transient, <100 ns VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20 481 VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C Note 1 ISD DC Source-Drain Current 640 IF Schottky Diode DC Forward Current 464 A VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C IDS (pulsed) Maximum Pulsed Drain-Source Current 960 VGS = 15 V IF (pulsed) Maximum Pulsed Diode Current 960 VGS = -4 V Note 1 -40 Fig. 32 Static 640 DC Continuous Drain Current Maximum Virtual Junction Temperature under Switching Conditions Note 1200 IDS TVJ op 1 Min. 175 TVJ = 25 ˚C; tPmax limited by TVJmax °C Assumes RTH JC = 0.1 °C/W and RDS(on) = 3.66 mΩ. Calculate PD = (TVJ – TC) / RTH JC. Calculate ID_MAX = √(PD / RDS(on)) Rev. A, 2020-06-12 CAS480M12HM3 4600 Silicon Dr., Durham, NC 27703 Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. PDF
Документация на CAS480M12HM3 

CAS480M12HM3 Rev.A Public datasheet Revision

Дата модификации: 12.06.2020

Размер: 791.3 Кб

11 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.