IGBT, N, 600V, 75A, TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:75A; Voltage, Vce Sat Max:2V; Power Dissipation:428W; Case Style:TO-247; Termination Type:Through Hole; Transistors, No. of:1; Voltage, Vceo:600V
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  • Корпус: TO-247-3
  • Норма упаковки: 1  шт. (в линейках)

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Тип Наименование Корпус Упаковка i Карточка
PA IKW75N60TFKSA1 (INFIN) TO-247-3 в линейках 30 шт IGBT 600V 80A 428W TO247-3

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TrenchStop® Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Positive temperature coefficient in VCE(sat) very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel EmCon HE diode 1) Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G E PG-TO-247-3-21 Applications: • Frequency Converters • Uninterrupted Power Supply Type IKW75N60T VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 600V 75A 1.5V 175°C K75T60 PG-TO-247-3-21 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value Unit 600 V A 2) TC = 25°C 80 TC = 100°C 75 Pulsed collector current, tp limited by Tjmax ICpul s 225 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 225 Diode forward current, limited by Tjmax IF 2) TC = 25°C 80 TC = 100°C 75 Diode pulsed current, tp limited by Tjmax IFpul s 225 Gate-emitter voltage VGE ±20 V tSC 5 µs Power dissipation TC = 25°C Ptot 428 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 3) Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 260 1) J-STD-020 and JESD-022 Value limited by bondwire 3) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Power Semiconductors 1 Rev. 2.4 May 06 PDF
Документация на IKW75N60T 

Microsoft Word - IKW75N60T Rev2_4G.doc

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