DRIVER, MOSFET/IGBT, HALF BRIDGE, SMD; Driver IC Type:MOSFET; Outputs, No. of:2; Voltage, Output:625.3V; Power, Dissipation Pd:0.625W; Voltage, Supply Min:10V; Case Style:SOIC; Pins, No. of:8; Temperature, Operating Range:-40°C to +125°C; Base Number:2153; IC Generic Number:2153; Logic Function Number:2153; Temp, Op. Max:125°C; Temp, Op. Min:-40°C; Termination Type:SMD; Voltage, Offset:600V; Voltage, Output Max:20V; Voltage, Output Min:10V; Voltage, Supply Max:16.8V; Current, Output Sink Min:400mA; Current, Output Source Min:200mA
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  • Группа: Драйверы FET-IGBT  
  • Серия: IR2153S  
  • Корпус: SO-8 SOIC8
  • Норма упаковки: 95  шт. (в линейках)
  • не рекомендуется для новых разработок

Технические характеристики

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Корпус SO-8 SOIC8
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Рабочая температура
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Аналоги 1

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Тип Наименование Корпус Упаковка i Nнижн Nверхн Uoffset Iout+ Iout- Uизол Опции T раб Примечание Карточка
P= IR2153STRPBF (INFIN) SO-8 SOIC8 в ленте 2500 шт Драйверы FET-IGBT - [SOIC-8-3.9]

Файлы 1

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Data Sheet No. PD60062 revO (NOTE:For new designs, we recommend IR’s new product IRS2153D) IR2153(D)(S) &(PbF) SELF-OSCILLATING HALF-BRIDGE DRIVER Features • • • • • • • • • • • • • • • Product Summary Integrated 600V half-bridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on CT pin Increased undervoltage lockout Hysteresis (1V) Lower power level-shifting circuit Constant LO, HO pulse widths at startup Lower di/dt gate driver for better noise immunity Low side output in phase with RT Internal 50nsec (typ.) bootstrap diode (IR2153D) Excellent latch immunity on all inputs and outputs ESD protection on all leads Also available LEAD-FREE VOFFSET 600V max. Duty Cycle 50% Tr/Tp 80/40ns Vclamp 15.6V Deadtime (typ.) 1.2 µs Packages Description The IR2153D(S) are an improved version of the 8 Lead SOIC 8 Lead PDIP popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins. Typical Connections IR2153D IR2153(S) 600V MAX 600V MAX VCC VCC VB HO HO COM VS CT LO CT Shutdown RT VS RT VB Shutdown LO COM 1 PDF
Документация на серию IR2153 


Дата модификации: 15.04.2009

Размер: 155.6 Кб

9 стр.

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