IRF6613TRPBF

MOSFET N-CH 40V 23A DIRECTFET
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Технические характеристики

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Корпус DIRECTFETMT
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
Примечание HEXFET Power MOSFETs Discrete N-Channel
Ёмкость затвора
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Файлы 1

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PD - 97087A IRF6613PbF IRF6613TRPbF l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ VDSS RDS(on) max Qg(typ.) 40V 3.4mΩ@VGS = 10V 42nC 4.1mΩ@VGS = 4.5V DirectFET™ ISOMETRIC MT Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ±20 Parameter k h @ 10V h ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 150 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 23 ID @ TA = 70°C Continuous Drain Current, VGS 18 IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation PD @TA = 25°C PD @TA = 70°C EAS k Power Dissipation h Power Dissipation h e Avalanche Current e Linear Derating Factor 180 89 2.8 Single Pulse Avalanche Energy IAR A f h TJ Operating Junction and TSTG Storage Temperature Range 1.8 W 200 mJ 18 A 0.022 W/°C -40 to + 150 °C Thermal Resistance Parameter hl Junction-to-Ambient il Junction-to-Ambient jl Junction-to-Case kl RθJA Junction-to-Ambient RθJA RθJA RθJC RθJ-PCB Notes  Junction-to-PCB Mounted Typ. Max. ––– 45 12.5 ––– 20 ––– ––– 1.4 1.0 ––– Units °C/W through Š are on page 2 www.irf.com 1 7/3/06 PDF
Документация на серию IRF6613 

IRF6613

Дата модификации: 18.08.2007

Размер: 235.1 Кб

9 стр.

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