IRF6714MTR1PBF

MOSFET N-CH 25V 29A DIRECTFET
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Технические характеристики

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Корпус DIRECTFETMX
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Примечание N-ch Power MOSFET 25V, 1.6mOhm, 29nC, DirectFET
Ёмкость затвора
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Аналоги 1

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
A+ IRFH5250DTRPBF (INFIN) PQFN8 в ленте 4000 шт
 
HEXFET Power MOSFETs Discrete N-Channel

Файлы 2

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PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l RoHs Compliant and Halogen Free  Low Profile (<0.6 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V Qg Qgd Qgs2 Qrr Qoss Vgs(th) 8.3nC 4.1nC 36nC 23nC 1.9V tot 29nC MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MX MQ MT MP Description The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Parameter VDS Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current ID = 29A 4 3 T J = 125°C 2 1 T J = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance Vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com e e f VGS, Gate-to-Source Voltage (V) Typical RDS(on) (mΩ) 5 Units 25 ±20 29 23 166 234 175 23 V A mJ A 14 ID= 23A 12 VDS= 20V VDS= 13V 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.651mH, RG = 25Ω, IAS = 23A. 1 04/29/09 PDF
Документация на серию IRF6714M 

Control Fet

Дата модификации: 30.04.2009

Размер: 256.3 Кб

9 стр.

PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l RoHs Compliant and Halogen Free  Low Profile (<0.6 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6mΩ@ 10V 2.6mΩ@ 4.5V Qg Qgd Qgs2 Qrr Qoss Vgs(th) 8.3nC 4.1nC 36nC 23nC 1.9V tot 29nC MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MX MQ MT MP Description The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Parameter VDS Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current ID = 29A 4 3 T J = 125°C 2 1 T J = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance Vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com e e f VGS, Gate-to-Source Voltage (V) Typical RDS(on) (mΩ) 5 Units 25 ±20 29 23 166 234 175 23 V A mJ A 14 ID= 23A 12 VDS= 20V VDS= 13V 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.651mH, RG = 25Ω, IAS = 23A. 1 04/29/09 PDF
Документация на серию IRF6714MPBF 

Control Fet

Дата модификации: 30.04.2009

Размер: 256.3 Кб

9 стр.

    Публикации 2

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