IRF6894MTRPBF

Infineon
MOSFET N-CH 25V 32A DIRECTFET
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Технические характеристики

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Корпус DIRECTFETMX
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
  Примечание: Power Field-Effect Transistor, 33A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ёмкость затвора
Особенности
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Аналоги 17

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
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 — —

Файлы 2

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IRF6894MPbF IRF6894MTRPbF HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant Containing No Lead and Bromide  Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Footprint compatible to DirectFET Applicable DirectFET SQ ™ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V min ±16V max 0.9m@ 10V 1.4m@ 4.5V Qg Qgd Qgs2 Qrr Qoss Vgs(th) 10nC 3.0nC 58nC 33nC 1.6V tot 31nC S G D S DirectFET™ ISOMETRIC Outline and Substrate Outline (see p.7,8 for details)  SX ST MQ MX D MX MT MP Description The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Base part number Package Type ® IRF6894MTRPbF DirectFET Medium Can Standard Pack Form Quantity Tape and Reel 4800 Orderable Part Number IRF6894MTRPbF Absolute Maximum Ratings Typical RDS(on) (m) 4.0 ID = 37A 3.0 2.0 TJ = 125°C 1.0 TJ = 25°C 0.0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes  Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET™ Website.  Surface mounted on 1 in. square Cu board, steady state. 1 VGS, Gate-to-Source Voltage (V) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Single Pulse Avalanche Energy  Avalanche Current  VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Max. 25 ±16 37 29 163 296 540 30 Units V A mJ A 14 ID = 30A 12 VDS = 20V VDS = 13V VDS= 5V 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  TC measured with thermocouple mounted to top (Drain) of part.  Repetitive rating; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 1.2mH, RG = 50, IAS = 30A. 2016-10-13 PDF
Документация на IRF6894MTRPBF 

IRF6894MPbF Product Datasheet

Дата модификации: 13.10.2016

Размер: 563.2 Кб

10 стр.

PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET®plus MOSFET with Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 0.9mΩ@ 10V 1.4mΩ@ 4.5V l Dual Sided Cooling Compatible  Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Package Inductance 26nC 9.8nC 2.8nC 56nC 31nC 1.6V l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested ISOMETRIC MX l Footprint compatible to DirectFET™ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) l l SQ SX ST MQ MT MX MP Description The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f h VGS, Gate-to-Source Voltage (V) VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Typical RDS(on) (mΩ) 4.0 ID = 33A 3.0 TJ = 125°C 2.0 1.0 TJ = 25°C 0.0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com Max. Units 25 ±16 32 25 160 260 410 26 V A mJ A 14.0 ID= 26A 12.0 VDS= 20V VDS= 13V VDS= 5V 10.0 8.0 6.0 4.0 2.0 0.0 0 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 1.18mH, RG = 50Ω, IAS = 26A. 1 8/12/11 PDF
Документация на серию IRF6894MPBF 

IRF6894MTRPbF.pmd

Дата модификации: 13.08.2011

Размер: 248.1 Кб

9 стр.

    Публикации 1

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    15 апреля 2011
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