IRF7303TRPBF

PD - 95177 IRF7303PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET® Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = 30V RDS(on) = 0.050Ω Top View Fifth Generation HEXFETs from International Rectifier utilize advan...
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Технические характеристики

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Корпус SO-8 SOIC8
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора
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Аналоги 2

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
P= IRF9956TRPBF (INFIN) SO-8 SOIC8 в ленте 4000 шт
A+ IRL6372TRPBF (INFIN) SO-8 SOIC8 в ленте 4000 шт MOSFET транзистор - [SOIC-8-3.9]; Примечание: DUAL N CH HEXFET POWER MOSFET, 30V, 8.1A,...

Файлы 2

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PD - 95177 IRF7303PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET® Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = 30V RDS(on) = 0.050Ω Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C V GS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. Units 5.3 4.9 3.9 20 2.0 0.016 ± 20 5.0 -55 to + 150 A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient„ Typ. Max. Units ––– 62.5 °C/W 10/6/04 PDF
Документация на серию IRF7303 

IRF7303PbF.pmd

Дата модификации: 07.10.2004

Размер: 230.5 Кб

9 стр.

PD - 9.1239D IRF7303 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 30V D1 D2 D2 RDS(on) = 0.050Ω Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. Units 5.3 4.9 3.9 20 2.0 0.016 ± 20 5.0 -55 to + 150 A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient„ Typ. Max. Units ––– 62.5 °C/W 8/25/97 PDF
Документация на IRF7303TRPBF 

IRF International Rectifier Manufacturer datasheet and components documentation IRF International Rectifier Datasheet Manufacturer application notes

Дата модификации: 25.06.1998

Размер: 111.9 Кб

9 стр.

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