IRF7739L2TRPBF

MOSFET N-CH 40V DIRECTFET L8
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Технические характеристики

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Корпус DIRECTFETL8
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Примечание N-MOSFET, 40V, 46A, DIRECTFET L8
Ёмкость затвора
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Аналоги 7

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
P+ IRF7739L1TRPBF (INFIN) DIRECTFETL8 4000 шт
 
N-MOSFET, 40V, 46A, DIRECTFET L8
A+ NVMFS5C404NLT3G (ONS) DFN-8 TDFN8 5000 шт
 
A+ NVMFS5C404NLT1G (ONS) DFN-8 TDFN8 1500 шт
 
A+ NTMFS5C404NLT1G (ONS) DFN-5 1500 шт
 
A+ AUIRF8739L2TR (INFIN) DIRECTFETL8 4000 шт
 
A+ AUIRF7739L2TR (INFIN) DIRECTFETL8 4000 шт
 
Automotive DirectFET Power MOSFET
A+ NVMFS5C404NLWFT1G (ONS) DFN-8 TDFN8 1500 шт
 

Файлы 1

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IRF7739L2PbF DirectFET™ Power MOSFET ‚ RoHS Compliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified l Typical values (unless otherwise specified) VDSS 40V min Qg SC M2 M4 RDS(on) ±20V max 0.70mΩ@ 10V tot Qgd Vgs(th) 220nC 81nC 2.8V DirectFET™ ISOMETRIC L8 Applicable DirectFET Outline and Substrate Outline  SB VGS L4 L6 L8 The IRF7739L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D 2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. TM Part number Package Type IRF7739L2TRPbF IRF7739L2TR1PbF DirectFET2 Large Can DirectFET2 Large Can Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 1000 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)e Continuous Drain Current, VGS @ 10V (Package Limited) f Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current 0.93 ID = 160A 0.92 g h g 8 Typical RDS (on) (mΩ) Typical RDS(on) (mΩ) VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM EAS IAR 10 T J = 25°C 6 4 T J = 125°C 2 0 "TR" suffix "TR1" suffix EOL notice #264 Max. Units 40 ±20 270 190 46 375 1070 270 160 V A mJ A VGS = 10V 0.91 0.90 0.89 0.88 0.87 0.86 0.85 5.0 5.5 6.0 6.5 7.0 7.5 8.0 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. 1 Note www.irf.com © 2014 International Rectifier 0 40 80 120 160 200 ID , Drain Current (A) Fig 2. Typical On-Resistance vs. Drain Current „ TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A. Submit Datasheet Feedback February 13, 2014 PDF
Документация на серию IRF7739L2PBF 

IRF7739L2PbF

Дата модификации: 19.02.2014

Размер: 306.1 Кб

11 стр.

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