IRF7749L1TRPBF

MOSFET N-CH 60V 33A DIRECTFETL8
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Технические характеристики

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Корпус DirectFET L8
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
Примечание N-MOSFET, 60V, 33A, DIRECTFET L8
Ёмкость затвора
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Файлы 2

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IRF7749L1TRPbF Applications l RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow)  l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) SC VGS RDS(on) 60V min ±20V max 1.1mΩ@ 10V tot Qgd Vgs(th) 200nC 71nC 2.9V Qg G D S S S S S S S S D DirectFET™ ISOMETRIC L8 Applicable DirectFET Outline and Substrate Outline  SB VDSS M2 M4 L4 L6 L8 Description The IRF7749L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7749L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Base part number IRF7749L1TRPbF Standard Pack Package Type Form Tape and Reel DirectFET Large Can Orderable Part Number Quantity 4000 IRF7749L1TRPbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)e Continuous Drain Current, VGS @ 10V (Package Limited) f g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g h 8.0 6.0 TJ = 25°C 4.0 TJ = 125°C 2.0 A mJ A VGS = 6.0V VGS = 8.0V 1.40 VGS = 10V VGS = 14V 1.20 1.00 0.80 4.0 6.0 8.0 10.0 12.0 14.0 VGS, Gate-to-Source Voltage (V) 16.0 Fig 1. Typical On-Resistance vs. Gate Voltage  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. 1 V TC= 25°C ( DS(on) mΩ) 10.0 0.0 Notes: Units 60 ±20 200 140 33 375 800 260 120 1.60 ID = 120A Typical R Typical R DS(on), (mΩ) 12.0 Max. www.irf.com © 2012 International Rectifier 40 80 120 160 200 ID, Drain Current (A) Fig 2. Typical On-Resistance vs. Drain Current „ TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.035mH, RG = 25Ω, IAS = 120A. February 18, 2013 PDF
Документация на серию IRF7749L1PBF 

IRF7749L1TRPbF Product Datasheet

Дата модификации: 26.02.2013

Размер: 270.2 Кб

10 стр.

IRF7749L1TRPbF Applications l RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow)  l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) SC VGS RDS(on) 60V min ±20V max 1.1mΩ@ 10V tot Qgd Vgs(th) 200nC 71nC 2.9V Qg G D S S S S S S S S D DirectFET™ ISOMETRIC L8 Applicable DirectFET Outline and Substrate Outline  SB VDSS M2 M4 L4 L6 L8 Description The IRF7749L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7749L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Base part number IRF7749L1TRPbF Standard Pack Package Type Form Tape and Reel DirectFET Large Can Orderable Part Number Quantity 4000 IRF7749L1TRPbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)e Continuous Drain Current, VGS @ 10V (Package Limited) f g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g h 8.0 6.0 TJ = 25°C 4.0 TJ = 125°C 2.0 A mJ A VGS = 6.0V VGS = 8.0V 1.40 VGS = 10V VGS = 14V 1.20 1.00 0.80 4.0 6.0 8.0 10.0 12.0 14.0 VGS, Gate-to-Source Voltage (V) 16.0 Fig 1. Typical On-Resistance vs. Gate Voltage  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. 1 V TC= 25°C ( DS(on) mΩ) 10.0 0.0 Notes: Units 60 ±20 200 140 33 375 800 260 120 1.60 ID = 120A Typical R Typical R DS(on), (mΩ) 12.0 Max. www.irf.com © 2012 International Rectifier 40 80 120 160 200 ID, Drain Current (A) Fig 2. Typical On-Resistance vs. Drain Current „ TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.035mH, RG = 25Ω, IAS = 120A. February 18, 2013 PDF
Документация на серию IRF7749L1 

IRF7749L1TRPbF Product Datasheet

Дата модификации: 26.02.2013

Размер: 270.2 Кб

10 стр.

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