IRF7769L1TRPBF

 

Технические характеристики

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Корпус DirectFET L8
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
Примечание N-MOSFET, 100V, 20A, DIRECTFET L8
Ёмкость затвора
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Файлы 2

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IRF7769L1TRPbF DirectFET™ Power MOSFET Typical values (unless otherwise specified) Applications RoHS Compliant, Halogen Free  Lead-Free (Qualified up to 260°C Reflow)  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  Industrial Qualified VDSS VGS RDS(on) 100V min ±20V max 2.8m@ 10V Qgd Vgs(th) 110nC 2.7V Qg tot 200nC D G SC M2 S S S S S S S D DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline  SB S L8 M4 L4 L6 L8 Description The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Part number Package Type IRF7769L1TRPbF DirectFET Large Can Standard Pack Form Quantity Tape and Reel 4000 Note “TR” suffix Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM EAS IAR Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited)  Pulsed Drain Current Single Pulse Avalanche Energy  Avalanche Current  V A mJ A 8.00 6.00 TJ = 125°C 4.00 2.00 TJ = 25°C 0.00 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes  Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET Website.  Surface mounted on 1 in. square Cu board, steady state. TA= 25°C ( DS(on) m 10.00 1 Units 3.10 ID = 74A 3.00 Typical R Typical R DS (on), (m 12.00 Max. 100 ±20 124 88 20 375 500 260 74 2.90 VGS = 7.0V VGS = 8.0V VGS = 10V VGS = 15V 2.80 20 40 60 80 100 ID, Drain Current (A) Fig 2. Typical On-Resistance vs. Drain Current  TC measured with thermocouple mounted to top (Drain) of part.  Repetitive rating; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 0.09mH, RG = 25, IAS = 74A. 2016-10-14 PDF
Документация на IRF7769L1TRPBF 

IRF7769L1TRPbF Product Datasheet

Дата модификации: 14.10.2016

Размер: 569.8 Кб

11 стр.

IRF7769L1TRPbF DirectFET™ Power MOSFET ‚ RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow)  l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified l Typical values (unless otherwise specified) VDSS SC M2 RDS(on) 100V min ±20V max Qg D G S S S S S S S S Vgs(th) 110nC 2.7V D DirectFET™ ISOMETRIC L8 M4 L4 2.8mΩ@ 10V Qgd tot 200nC Applicable DirectFET Outline and Substrate Outline  SB VGS L6 L8 Description The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D 2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Part number Package Type IRF7769L1TRPbF DirectFET Large Can Standard Pack Form Quantity Tape and Reel 4000 Note "TR" suffix Absolute Maxim um Ratings Parameter V DS V GS ID @ ID @ ID @ ID @ I DM E AS I AR TC TC TA TC = 25°C = 100°C = 25°C = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ Continuous Drain Current, VGS @ Continuous Drain Current, VGS @ Continuous Drain Current, VGS @ Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g g f f e 10V (Silicon Limited) 10V (Silicon Limited) 10V (Silicon Limited) 10V (Package Limited) f h V A mJ A 8.00 6.00 TJ = 125°C 4.00 2.00 TJ = 25°C 0.00 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com © 2012 International Rectifier TA= 25°C ( DS(on) mΩ) 10.00 1 Units 100 ±20 124 88 20 375 500 260 74 3.10 ID = 74A 3.00 Typical R Typical R DS(on), (mΩ) 12.00 Max. 2.90 VGS = 7.0V VGS = 8.0V VGS = 10V VGS = 15V 2.80 20 40 60 80 100 ID, Drain Current (A) Fig 2. Typical On-Resistance vs. Drain Current „ TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.09mH, RG = 25Ω, IAS = 74A. February 18, 2013 PDF
Документация на серию IRF7769L1PBF 

IRF7769L1TR1PbF Product Datasheet

Дата модификации: 26.02.2013

Размер: 261.6 Кб

10 стр.

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