IRF7769L2TRPBF

 
  • Группа: FET транзисторы  
  • Серия: IRF7769L2PBF  
  • Корпус: DIRECTFETL8
  • Норма упаковки: 4000  шт. (в ленте)
  • не рекомендуется для новых разработок

Технические характеристики

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Корпус DIRECTFETL8
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Примечание N-MOSFET, 100V, 20A, DIRECTFET L8
Ёмкость затвора
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Аналоги 1

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
P= IRF7769L1TRPBF (INFIN) DIRECTFETL8 4000 шт
 
N-MOSFET, 100V, 20A, DIRECTFET L8

Файлы 1

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IRF7769L2PbF l DirectFET™ Power MOSFET ‚ l Typical values (unless otherwise specified) RoHS Compliant, Halogen Free  Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified VDSS SC Qg tot 200nC D G S S S S S S S S M4 L4 2.8mΩ@ 10V Qgd Vgs(th) 110nC 2.7V D DirectFET™ ISOMETRIC L8 M2 RDS(on) 100V min ±20V max Applicable DirectFET Outline and Substrate Outline  SB VGS L6 L8 Description The IRF7769L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D 2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Orderable part number Package Type IRF7769L2TRPbF IRF7769L2TR1PbF DirectFET2 Large Can DirectFET2 Large Can Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 1000 Note "TR" suffix "TR1" suffix EOL notice # 264 Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 100 V VGS Gate-to-Source Voltage ±20 f f @ 10V (Silicon Limited)e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 124 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 88 ID @ TA = 25°C Continuous Drain Current, VGS 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy IAR Avalanche Current g g f mJ 74 A 6.00 TJ = 125°C 4.00 2.00 TJ = 25°C 0.00 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. www.irf.com © 2014 International Rectifier ( DS(on) mΩ) 8.00 TA= 25°C 3.00 Typical R Typical R DS(on), (mΩ) 260 3.10 ID = 74A 10.00 1 375 500 h 12.00 A 2.90 VGS = 7.0V VGS = 8.0V VGS = 10V VGS = 15V 2.80 20 40 60 80 100 ID, Drain Current (A) Fig 2. Typical On-Resistance vs. Drain Current „ TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.09mH, RG = 25Ω, IAS = 74A. Submit Datasheet Feedback May 6, 2014 PDF
Документация на серию IRF7769L2PBF 

IRF7769L2PbF Product Datasheet

Дата модификации: 06.05.2014

Размер: 259.7 Кб

11 стр.

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