SMBJ17A

Littelfuse
Защитный диод - [DO-214AA, SMB]; Pрасс(пик): 600 Вт; Uраб: 17 В; Uимп(макс): 27.6 В; Iимп(макс): 21.8 А; Линий: 1
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Внешний вид серии SMBJ

Технические характеристики

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Корпус DO-214AA SMB
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Ток утечки при рабочем напряжении
Максимальный импульсный ток
Тип супрессора по свойствам
Количество линий ограничения
  Примечание: Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
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Аналоги 31

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
PA SMBJ17A/TR7 (YAG)
 
DO214AA 5000 шт — — SMBJ, DO-214AA, 17V, 27.6V, Reel 7"
P= SMBJ17A (BOURNS)
 

SMBJ17A/TR7 (YAG) 		DO-214AA SMB Защитный диод - — — — TVS DIODE 17VWM SMD General Purpose
P= SMBJ17A (TSC)
 

SMBJ17A/TR7 (YAG) 		DO214AA — — Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P= SMBJ17A-Q (BOURNS)
 
— — — — — Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P= SMBJ17A-E3/52 (VISHAY)
 
DO214AA Защитный диод - Примечание: TVS DIODE, 600W, 17V, DO-214AA; Reverse Stand-Off Voltage V... — — — TVS DIODE, 600W, 17V, DO-214AA; Reverse Stand-Off Voltage Vrwm:17V; Breakdown Voltage Range:18.9V to 20.9V; Clamping Voltage Vc Max:27.6V; Diode Configuration:Unidirectional; Peak Pulse Current Ippm:21.7A; Diode Case Style:DO-214AA ;RoHS Compliant: Yes
P- SMBJ17A-13-F (DIODES)
 
DO214AA Защитный диод - —
P- MXLSMBJ17Ae3 (MCRCH)
 
—
 
 — — — Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ17A (GWS)
 

SMBJ17A/TR7 (YAG) 		—
 
 — — — — — — — — — — — —
A- SMAJ17A (VISHAY)
 
—
 
 — — — — — — — Trans Voltage Suppressor Diode, 17V V(RWM), Unidirectional
A- MXLSMBJ17Ae3 (MCRCH)
 
—
 
 — — — Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
A- MSMCJ17AE3/TR (MCRCH)
 
DO-214AC DO-214AC (SMA) — — — Trans Voltage Suppressor Diode, 1500W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- MSMLJ17A (MCRCH)
 
— — — — Trans Voltage Suppressor Diode, 3000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SMCG17A-E3/57T (VISHAY)
 
SOD-123 — — — Trans Voltage Suppressor Diode, 1500W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB
A- SMP17A-M3/84A (VISHAY)
 
DO220AA
 
 — — — — Trans Voltage Suppressor Diode, 400W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-220AA
A- SMCJ17A-E3/57T (VISHAY)
 
DO214AB 1 шт Защитный диод - — — — Trans Voltage Suppressor Diode, 1500W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SMA6F17A-M3/6A (VISHAY)
 
DO-220AA (SMP)
 
 — — — Trans Voltage Suppressor Diode, 4000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-221AC
A- MSMP17A-M3/89A (VISHAY)
 
DO-220AA (SMP)
 
 — — — — Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon
A- 5KP17A-E3/54 (VISHAY)
 
— Защитный диод - — — — Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Unidirectional, 1 Element, Silicon
A- SMF17A-M3-08 (VISHAY)
 
—
 
 — — — Trans Voltage Suppressor Diode, 1000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AB
A- SMAJ17A-E3/61 (VISHAY)
 
DO214AC Защитный диод - — — Trans Voltage Suppressor Diode, 400W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
A- MXLLCE17Ae3 (MCRCH)
 
— — — — Trans Voltage Suppressor Diode, 1500W, 17V V(RWM), Unidirectional, 1 Element, Silicon
A- SMF17A (LTL)
 
SOD123FL 3000 шт Защитный диод - [SOD-123F]; Pрасс(пик): 200 Вт; Uраб: 17 В; Uимп(макс): 27.6 В; Iимп(ма... — — Trans Voltage Suppressor Diode, 200W, 17V V(RWM), Unidirectional, 1 Element, Silicon
A- TPSMA6L17A (LTL)
 
DO221AC 3000 шт Защитный диод - [DO-221AC, SMA ]; Pрасс(пик): 600 Вт; Uраб: 17 В; Uимп(макс): 27.6 В; I... — — Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-221AC
A- 5.0SMDJ17A (LTL)
 
DO-214AB SMC 3000 шт Защитный диод - [DO-214AB, SMC]; Pрасс(пик): 5 кВт; Uраб: 17 В; Uимп(макс): 27.6 В; Iим... — Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- 5.0SMDJ17AS (LTL)
 
— 3000 шт — — Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SMCJ17A (LTL)
 

SMCJ17A (ONS-FAIR) 		DO-214AB SMC 3000 шт Защитный диод - [DO-214AB, SMC]; Pрасс(пик): 1.5 кВт; Uраб: 17 В; Uимп(макс): 27.6 В; I... — Trans Voltage Suppressor Diode, 1500W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SLD6S17A (LTL)
 
—
 
 — — Trans Voltage Suppressor Diode, 1800W, 17V V(RWM), Unidirectional, 1 Element, Silicon
A- SLD8S17A (LTL)
 
DO218AB 500 шт
 
 — — Trans Voltage Suppressor Diode, 7000W, 17V V(RWM), Unidirectional, 1 Element, Silicon
A- SMAJ17A (LTL)
 
DO214AC 5000 шт Защитный диод - [DO-214AC, SMA]; Pрасс(пик): 400 Вт; Uраб: 17 В; Uимп(макс): 27.6 В; Iи... — Trans Voltage Suppressor Diode, 400W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
A- 5KP17A (LTL)
 
— 800 шт Защитный диод - [P600, Axial]; Pрасс(пик): 5 кВт; Uраб: 17 В; Uимп(макс): 27.6 В; Iимп(... — Trans Voltage Suppressor Diode, 5000W, 17V V(RWM), Unidirectional, 1 Element, Silicon
A- SMCJ17A-Q (BOURNS)
 
— — — — Trans Voltage Suppressor Diode, 1500W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB

Файлы 1

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TVS Diodes Surface Mount – 600W > SMBJ series SMBJ Series RoHS Pb e3 Description The SMBJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Uni-directional Features Bi-directional Agency Approvals Agency Agency File Number E230531 Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted) Parameter Peak Pulse Power Dissipation(Fig.2) by 10/1000us Test Waveform(Fig.4) (Note 1),(Note 2)-Single Die Parts Peak Pulse Power Dissipation(Fig.2) by 10/1000us Test Waveform(Fig.4) (Note 1), (Note 2)-Stacked Die Parts (Note 5) Power Dissipation on Infinite Heat Sink at TL=50OC Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) Maximum Instantaneous Forward Voltage at 50A for Unidirectional Only (Note 4) Operating Temperature Range Symbol Value Unit PPPM 600 W PPPM 800 W PD 5.0 W IFSM 100 A VF 3.5/5.0 V °C TJ -65 to 150 Storage Temperature Range TSTG -65 to 175 °C Typical Thermal Resistance Junction to Lead RƟJL 20 °C/W Typical Thermal Resistance Junction to Ambient RƟJA 100 °C/W Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above TJ (initial) =25OC per Fig. 3. 2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. 4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts. 5. For stacked die component details, please refer to part numbers labeled by * in Electrical Characteristics. Functional Diagram • Excellent clamping capability • Low incremental surge resistance • Typical IR less than 1μA when VBR min>12V • For surface mounted applications to optimize board space • Low profile package • Typical failure mode is short from over-specified voltage or current • Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c • IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact) • ESD protection of data lines in accordance with IEC 61000-4-2 • EFT protection of data lines in accordance with IEC 61000-4-4 • Built-in strain relief • Fast response time: typically less than 1.0ps from 0V to VBR min • 600W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycles):0.01% • High temperature to reflow soldering guaranteed: 260°C/30sec • VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25)) (αT:Temperature Coefficient, typical value is 0.1%) • UL Recognized compound meeting flammability classification V-0 • Meet MSL level1, per J-STD-020, LF maximun peak of 260°C • Matte tin lead–free plated • Halogen free and RoHS compliant • Pb-free E3 means 2nd level interconnect is Pbfree and the terminal finish material is tin(Sn) (IPC/ JEDEC J-STD-609A.01) • UL Recognized to ANSI/ UL 497B: Protectors for Data Communications and Fire-Alarm Circuits. Applications TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. Bi-directional Cathode Anode Uni-directional © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/03/20 PDF
Документация на SMBJ100A 

Дата модификации: 03.06.2020

Размер: 972.1 Кб

6 стр.

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