SMBJ26

Защитный диод - [DO-214AA, SMB]; Pрасс(пик): 600 Вт; Uраб: 26 В; Uимп(макс): 44.21 В; Iимп(макс): 14.3 А; Линий: 1
развернуть ▼ свернуть ▲

Технические характеристики

показать свернуть
Корпус DO214AA
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Ток утечки при рабочем напряжении
Максимальный импульсный ток
Тип супрессора по свойствам
Количество линий ограничения
  Примечание: Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
Нашли ошибку? Выделите её курсором и нажмите CTRL + ENTER

Аналоги 22

показать свернуть
Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
P= SMBJ26A (ST)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
 
Trans Voltage Suppressor Diode
P= SMBJ26A (DC)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
DO-214AA SMB в ленте 3000 шт Защитный диод - [DO-214AA]; Pрасс: 5 Вт; Pрасс(пик): 600 Вт; Uраб: 26 В; Uогр(ном): 30 ... Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P= SMBJ26A (BOURNS)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
DO-214AA SMB Защитный диод - TVS DIODE 26VWM SMD General Purpose
P= 1SMB26AT3 (ONS) Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P= P6SMBJ26A (SMK) DO214AA в ленте 3000 шт Защитный диод - [DO-214AA]
P- SMBJ26D-M3/H (VISHAY) DO214AA Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ26A (AVX)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
DO-214AA SMB Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ26A-TP (MCC) DO214AA Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ26A-13-F (DIODES) DO214AA Защитный диод -
P- SMBJ26A-TR (ST) DO214AA в ленте 2500 шт
 
P- SMBJ26A (LTL)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
DO-214AA SMB в ленте 3000 шт Защитный диод - [DO-214AA, SMB]; Pрасс(пик): 600 Вт; Uраб: 26 В; Uимп(макс): 42.1 В; Iи... Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ26A (VISHAY)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
Trans Voltage Suppressor Diode, 26V V(RWM), Unidirectional
P- SMBJ26A (YJ)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
DO214AA 3000 шт
 
Trans Voltage Suppressor Diode, 26V V(RWM), Unidirectional
P- SMBJ26AR5G (TSC) Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ26D-M3/I (VISHAY) Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ26A-E3/52 (VISHAY) DO214AA в ленте 750 шт Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ26A (JIEJIE)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
 
P- SMBJ26A (TSC)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
DO214AA 1 шт
 
P- SMBJ26A (GWS)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
 
P- SMBJ26A (DIODES)
SMBJ26A/TR7 (YAG)
SMBJ26A (ONS-FAIR)
Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
P- SMBJ26A-E3/5B (VISHAY) DO214AA Защитный диод - Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
A- 1.5SMCJ26 (DIOTEC) Защитный диод - [DO-214AB]; Pрасс(пик): 1.5 кВт; Uраб: 26 В; Uогр(диапазон): 28.9...35.... Trans Voltage Suppressor Diode, 1500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB

Файлы 1

показать свернуть
Transient Voltage Suppression Diodes Surface Mount – 600W > SMBJ series SMBJ RoHS Pb e3 Description Uni-directional Bi-directional The SMBJ is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Agency Approvals AGENCY AGENCY FILE NUMBER E230531 Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted) Parameter Symbol Value Unit Peak Pulse Power Dissipation at TA=25ºC by 10/1000µs Waveform (Fig.2)(Note 1), (Note 2), (Note 5) PPPM 600 W Power Dissipation on Infinite Heat Sink at TL=50OC PD 5.0 W Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) IFSM 100 A Maximum Instantaneous Forward Voltage at 50A for Unidirectional Only (Note 4) VF 3.5/5.0 V Operating Temperature Range TJ -65 to 150 °C Storage Temperature Range TSTG -65 to 175 °C Typical Thermal Resistance Junction to Lead RθJL 20 °C/W Typical Thermal Resistance Junction to Ambient RθJA 100 °C/W Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above TJ (initial) =25OC per Fig. 3. 2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. 4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts. 5. The PPPM of stacked-die parts is 800W and please contact littelfuse for the detail stacked-die parts. • 600W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycles):0.01% • Excellent clamping capability • Low incremental surge resistance • Typical IR less than 1μA when VBR min>12V • For surface mounted applications to optimize board space • Low profile package • Typical failure mode is short from over-specified voltage or current • Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c • IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact) • ESD protection of data lines in accordance with IEC 61000-4-2 • EFT protection of data lines in accordance with IEC 61000-4-4 • Built-in strain relief • Fast response time: typically less than 1.0ps from 0V to BV min • High temperature to reflow soldering guaranteed: 260°C/40sec • VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25)) (αT:Temperature Coefficient, typical value is 0.1%) • Plastic package is flammability rated V-0 per Underwriters Laboratories • Meet MSL level1, per J-STD-020, LF maximun peak of 260°C • Matte tin lead–free plated • Halogen free and RoHS compliant • Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/JEDEC J-STD609A.01) Applications TVS devices are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. ® Functional Diagram Additional Infomarion Bi-directional Cathode Datasheet Anode Uni-directional © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 11/20/15 Resources Samples PDF
Документация на SMBJ12C 

Дата модификации: 19.11.2015

Размер: 995.2 Кб

6 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.