SMDJ100CA

Littelfuse
Защитный диод - [DO-214AB, SMC]; Pрасс(пик): 3 кВт; Uраб: 100 В; Uимп(макс): 162 В; Iимп(макс): 18.5 А; Тип: Симм; Линий: 1
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Внешний вид серии SMDJ

Технические характеристики

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Корпус DO214AB
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Ток утечки при рабочем напряжении
Максимальный импульсный ток
Тип супрессора по свойствам
Количество линий ограничения
  Примечание: Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB
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Аналоги 19

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
A- SMBJ100CA-AT/TR7 (YAG)
 
— — SMBJ, DO-214AA, 100V, 162V, AUTO, Reel 7"
A- SMAJ100CAQ (YJ)
 
DO214AC
 
 — Trans Voltage Suppressor Diode
A- SMCJ100CA (YJ)
 

SMCJ100CA/TR13 (YAG)
SMCJ100CA (ONS-FAIR) 		DO214AB в ленте 3000 шт
 
 — Trans Voltage Suppressor Diode, 1500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB
A- SMCJ100CAQ (YJ)
 
DO214AB
 
 — Trans Voltage Suppressor Diode
A- SMBJ100CAQ (YJ)
 
DO214AA
 
 — Trans Voltage Suppressor Diode
A- SMF100CA (YJ)
 
SOD123FL 3000 шт
 
 — Trans Voltage Suppressor Diode
A- SMAJ100CA/TR13 (YAG)
 
DO-214AC DO-214AC (SMA) — SMAJ, DO-214AC, 100V, 162V, Reel 13"
A- SMAJ100CA/TR7 (YAG)
 
DO214AC 10000 шт — SMAJ, DO-214AC, 100V, 162V, Reel 7"
A- SMBJ100CA (YJ)
 

SMBJ100CA (ONS-FAIR) 		DO214AA в ленте 3000 шт
 
 — Trans Voltage Suppressor Diode, 100V V(RWM), Bidirectional
A- SMDJ100CA/TR13 (YAG)
 
— — SMDJ, DO-214AB, 100V, 162V, Reel 13"
A- SMCJ100CA-AT/TR7 (YAG)
 
— — SMCJ, DO-214AB, 100V, 162V, AUTO, Reel 7"
A- SJD12C100L01 (YAG)
 
DO-220AA (SMP) — — TVS ESD, SOD-123S, 100V, 162V, Reel
A- SMBJ100CA (ST)
 

SMBJ100CA (ONS-FAIR) 		DO-214AA SMB в ленте 2500 шт — Trans Voltage Suppressor Diode
A- SMBJ100CA-TR (ST)
 
DO214AA в ленте 2500 шт
 
 — — Trans Voltage Suppressor Diode, 4000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
A- SMCJ100CA (TSC)
 

SMCJ100CA/TR13 (YAG)
SMCJ100CA (ONS-FAIR) 		— 200 шт — — — Trans Voltage Suppressor Diode, 1500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB
A- SMAJ100CAHR3G (TSC)
 
— —
A- SMBJ100CA (TSC)
 

SMBJ100CA (ONS-FAIR) 		— 30 шт — — Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
A- 1.5SMCJ100CA (DIOTEC)
 
DO214AB Защитный диод - [DO-214AB]; Pрасс(пик): 1.5 кВт; Uраб: 100 В; Uогр(диапазон): 111...123... — Trans Voltage Suppressor Diode, 1500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB
A- SMF100CA (SUNMATE)
 
— 300 шт
 
 — — Trans Voltage Suppressor Diode, 1000W, 100V V(RWM), Bidirectional, 1 Element, Silicon

Файлы 1

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Transient Voltage Suppression Diodes Surface Mount – 3000W > SMDJ series SMDJ Series RoHS Description Uni-directional Bi-directional The SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Agency Approvals AGENCY AGENCY FILE NUMBER E230531 Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Peak Pulse Power Dissipation at TA=25ºC by 10/1000µs Waveform (Fig.2)(Note 1), (Note 2) PPPM 3000 W Power Dissipation on Infinite Heat Sink at TA=50°C PM(AV) 6.5 W IFSM 300 A VF 3.5 V TJ , TSTG -55 to 150 °C Typical Thermal Resistance Junction to Lead RuJL 15 °C/W Typical Thermal Resistance Junction to Ambient RuJA 75 °C/W Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) Maximum Instantaneous Forward Voltage at 100A for Unidirectional Only Operating Junction and Storage Temperature Range • For surface mounted applications in order to optimize board space • Low profile package • Typical failure mode is short from over-specified voltage or current • Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c • IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact) • ESD protection of data lines in accordance with IEC 61000-4-2 (IEC801-2) • EFT protection of data lines in accordance with IEC 61000-4-4 (IEC801-4) • Built-in strain relief • VBR @TJ= VBR@25°C × (1+αT x (TJ - 25)) (αT: Temperature Coefficient) • Glass passivated chip junction • 3000W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycles):0.01% • Fast response time: typically less than 1.0ps from 0V to BV min • Excellent clamping capability • Low incremental surge resistance • Typical IR less than 2µA above 12V • High temperature soldering guaranteed: 260°C/40 seconds at terminals • Plastic package has underwriters laboratory flammability 94V-O • Meet MSL level1, per J-STD-020, LF maximum peak of 260°C • Matte tin lead–free plated • Halogen free and RoHS compliant Applications TVS devices are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above TA = 25°C per Fig. 3. 2. Mounted on copper pad area of 0.31x0.31” (8.0 × 8.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. Additional Information Functional Diagram Datasheet Bi-directional Cathode Anode Uni-directional © 2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/24/14 Resources Samples PDF
Документация на серию SMDJ 

Дата модификации: 25.01.2014

Размер: 1.03 Мб

6 стр.

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