SMDJ120A-T7

Littelfuse
Защитный диод - Pрасс(пик): 3 кВт; Uраб: 120 В; Uимп(макс): 193 В; Iимп(макс): 15.5 А; Линий: 1
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Внешний вид серии SMDJ

Технические характеристики

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Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Максимальный импульсный ток
Тип супрессора по свойствам
Количество линий ограничения
  Примечание: Trans Voltage Suppressor Diode, 3000W, 120V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
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Аналоги 12

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
A- SMBJ120A (YJ)
 

SMBJ120A (ONS-FAIR) 		DO214AA в ленте 3000 шт
 
 — Trans Voltage Suppressor Diode, 120V V(RWM), Unidirectional
A- SMCJ120AQ (YJ)
 
DO214AB
 
 — Trans Voltage Suppressor Diode
A- SMAJ120AQ (YJ)
 
DO214AC
 
 — Trans Voltage Suppressor Diode
A- SMBJ120AQ (YJ)
 
DO214AA
 
 — Trans Voltage Suppressor Diode
A- SMF120A (YJ)
 
SOD123FL 3000 шт
 
 — Trans Voltage Suppressor Diode
A- SMAJ120A/TR13 (YAG)
 
DO-214AC DO-214AC (SMA) — SMAJ, DO-214AC, 120V, 193V, Reel 13"
A- SMDJ120A/TR13 (YAG)
 
— — SMDJ, DO-214AB, 120V, 193V, Reel 13"
A- SMCJ120A (TSC)
 

SMCJ120A (ONS-FAIR) 		— 3000 шт — — — Trans Voltage Suppressor Diode, 1500W, 120V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SMBJ120A (TSC)
 

SMBJ120A (ONS-FAIR) 		— Защитный диод - — — Trans Voltage Suppressor Diode, 600W, 120V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
A- SMAJ120AHR3G (TSC)
 
— —
A- SMF120A (SUNMATE)
 
DO-220AA (SMP)
 
 — — Trans Voltage Suppressor Diode, 1000W, 120V V(RWM), Unidirectional, 1 Element, Silicon
A- SMAJ120A+ (MULTCMP)
 
DO-214AC DO-214AC (SMA) — — Trans Voltage Suppressor Diode, 400W, 120V V(RWM), Unidirectional, 1 Element, Silicon

Файлы 2

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TVS Diodes Surface Mount – 3000W > SMDJ series SMDJ Series RoHS Pb e3 Description Uni-directional The SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Bi-directional Agency Approvals Agency Agency File Number E230531 Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted) Parameter Symbol Value Unit Peak Pulse Power Dissipation(Fig.2) by 10/1000us Test Waveform(Fig.4) (Note 1),(Note 2) -Single Die Parts PPPM 3000 W Peak Pulse Power Dissipation(Fig.2) by 10/1000us Test Waveform(Fig.4) (Note 1), (Note 2) -Stacked Die Parts (Note 5) PPPM 4000 W Power Dissipation on Infinite Heat Sink at TL=50OC PD 6.5 W Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) IFSM 300 A Maximum Instantaneous Forward Voltage at 100A for Unidirectional Only(Note 4) VF 3.5/5.0 V Operating Temperature Range TJ -65 to 150 °C Storage Temperature Range TSTG -65 to 175 °C Typical Thermal Resistance Junction to Lead RƟJL 15 °C/W Typical Thermal Resistance Junction to Ambient RƟJA 75 °C/W Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above TJ (initial) =25OC per Fig. 3. • 3000W PPPM capability at 10/1000μs waveform, repetition rate (duty cycles):0.01% • For surface mounted applications in order to optimize board space • Low profile package • Typical failure mode is short from over-specified voltage or current • Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c • IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact) • ESD protection of data lines in accordance with IEC 61000-4-2 • EFT protection of data lines in accordance with IEC 61000-4-4 • Built-in strain relief • Glass passivated chip junction • Fast response time: typically less than 1.0ps from 0V to BV min • Excellent clamping capability • Low incremental surge resistance • Typical IR less than 2μA when VBR min>12V • High temperature to reflow soldering guaranteed: 260°C/30sec • VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25))(αT:Temperature Coefficient, typical value is 0.1%) • UL Recognized compound meeting flammability rating V-0 • Meet MSL level1, per J-STD-020, LF maximun peak of 260°C • Matte tin lead–free plated • Halogen free and RoHS compliant • Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/JEDEC J-STD609A.01) Applications TVS components are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in telecom, computer, Industrial and consumer electronic applications. 2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional component only, duty cycle=4 per minute maximum. 4. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts. 5. For stacked die component details, please refer to part numbers labeled by * in Electrical Characteristics. Additional Infomarion Functional Diagram Bi-directional Datasheet Cathode Resources Samples Anode Uni-directional © 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: JC.10/29/20 PDF
Документация на SMDJ100A-T7 

Дата модификации: 29.10.2020

Размер: 1002.4 Кб

6 стр.

Transient Voltage Suppression Diodes Surface Mount – 3000W > SMDJ series SMDJ Series RoHS Description Uni-directional Bi-directional The SMDJ series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Agency Approvals AGENCY AGENCY FILE NUMBER E230531 Maximum Ratings and Thermal Characteristics (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Peak Pulse Power Dissipation at TA=25ºC by 10/1000µs Waveform (Fig.2)(Note 1), (Note 2) PPPM 3000 W Power Dissipation on Infinite Heat Sink at TA=50°C PM(AV) 6.5 W IFSM 300 A VF 3.5 V TJ , TSTG -55 to 150 °C Typical Thermal Resistance Junction to Lead RuJL 15 °C/W Typical Thermal Resistance Junction to Ambient RuJA 75 °C/W Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) Maximum Instantaneous Forward Voltage at 100A for Unidirectional Only Operating Junction and Storage Temperature Range • For surface mounted applications in order to optimize board space • Low profile package • Typical failure mode is short from over-specified voltage or current • Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c • IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact) • ESD protection of data lines in accordance with IEC 61000-4-2 (IEC801-2) • EFT protection of data lines in accordance with IEC 61000-4-4 (IEC801-4) • Built-in strain relief • VBR @TJ= VBR@25°C × (1+αT x (TJ - 25)) (αT: Temperature Coefficient) • Glass passivated chip junction • 3000W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycles):0.01% • Fast response time: typically less than 1.0ps from 0V to BV min • Excellent clamping capability • Low incremental surge resistance • Typical IR less than 2µA above 12V • High temperature soldering guaranteed: 260°C/40 seconds at terminals • Plastic package has underwriters laboratory flammability 94V-O • Meet MSL level1, per J-STD-020, LF maximum peak of 260°C • Matte tin lead–free plated • Halogen free and RoHS compliant Applications TVS devices are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above TA = 25°C per Fig. 3. 2. Mounted on copper pad area of 0.31x0.31” (8.0 × 8.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. Additional Information Functional Diagram Datasheet Bi-directional Cathode Anode Uni-directional © 2014 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/24/14 Resources Samples PDF
Документация на серию SMDJ 

Дата модификации: 25.01.2014

Размер: 1.03 Мб

6 стр.

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