TC1550TG-G

Microchip
TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a de...
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Технические характеристики

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Корпус SO8150
Тип проводимости и конфигурация
  Примечание: Power Field-Effect Transistor, 350A I(D), 500V, 60ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
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TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage Applications ► ► ► ► ► High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Package Option Device TC1550 RDS(ON) BVDSS/BVDGS 8-Lead SOIC (Max) 4.90x3.90mm body 1.75mm height (max) 1.27mm pitch N-Channel P-Channel N-Channel P-Channel (V) (V) (Ω) (Ω) TC1550TG-G 500 -500 60 125 -G indicates package is RoHS compliant (‘Green’) Pin Configuration DP DN DN DP Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature Soldering temperature -55°C to + 150°C 300°C * Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * SN SP GN GP 8-Lead SOIC (TG) (top view) Product Marking YYWW C1550 LLLL YY = Year Sealed WW = Week Sealed L = Lot Number = “Green” Packaging 8-Lead SOIC (TG) Distance of 1.6mm from case for 10 seconds. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com PDF
Документация на TC1550TG-G 

TC1550 Datasheet - N- and P-Channel Enhancement-Mode Dual MOSFET

Дата модификации: 24.09.2021

Размер: 418.9 Кб

5 стр.

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