BC847A.215
- Группа: Биполярный транзистор
- Серия: BC847A
- Корпус: TO236
- Норма упаковки: 3000 шт. (в ленте)
Технические характеристики
показать свернуть| Корпус | TO236 | |
|---|---|---|
| Тип проводимости и конфигурация |  | |
| Комплементарная пара |  | |
| Рассеиваемая мощность |  | |
| Напряжение КЭ максимальное |  | |
| Ток коллектора |  | |
| Граничная рабочая частота |  | |
| Коэффициент усиления по току |  |
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Аналоги 71
показать свернуть| Тип | Наименование | Корпус | Упаковка | i | Тип | Пара | Pрасс | UКЭ(макс) | UКЭ(пад) | IК(макс) | F гран | h 21 | R1 | R2 | Примечание | Карточка товара |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| P+ | BC846B.215 (NEX-NXP) | TO236 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P+ | BC847BLT1G (ONS) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P+ | BC847C.215 (NEX-NXP) | TO236 | в ленте 3000 шт |
|  |  |  |  |  |  |  |  | — | — | — | |
| P+ | BC846BLT1G (ONS) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P= | BC847B (HOTTECH) BC847B (DIODES) | TO236 | в ленте 3000 шт | — | — | — | — | — | — | — | — | — | — | — | ||
| P= | BC847A (YJ) BC847A (DIODES) | SOT-23-3 | 3000 шт |  | — |  |  |  |  |  |  | — | — | — | ||
| P= | BC847.215 (NEX-NXP) | TO236 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — |  | |
| P= | BC847C (YJ) BC847C (DIODES) | SOT-23-3 | в ленте 3000 шт |  | — |  |  |  |  |  |  | — | — | — | ||
| P= | BC847AQ (YJ) | SOT-23-3 | — | — | — | — | — | — | — | — | — | — | — | |||
| P= | BC847CT (NXP) | SOT-23-3 | 1 шт |  | — | — |  | — |  |  |  | — | — | — | ||
| P= | BC847C (DIODES) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC847C (NEX-NXP) BC847C (DIODES) | SOT-23-3 | в ленте 3000 шт |
|  | — | — |  | — |  |  |  | — | — | — | |
| P= | BC847ALT1G (ONS) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P= | BC847BLT1 (ONS) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | |
| P= | BC847CW.115 (NEX-NXP) | SC703 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P= | BC847C-7-F (DIODES) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BCW72LT1G (ONS) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | |
| P= | BC847B.215 (NEX-NXP) | TO236 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — |  | |
| P= | BC847A-TP (MCC) | TO236 |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | ||
| P= | BCW71.215 (NEX-NXP) | TO236 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — |  | |
| P= | BC847B.235 (NEX-NXP) | TO236 | в ленте 10000 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P= | BC847CLT1G (ONS) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P= | BC847CMTF (ONS-FAIR) | TO236 | 1 шт | — | — | — | — | — | — | — | — | — | — | — | ||
| P= | LBC847BLT1G (LRC) | — | 1 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC847C (DC) BC847C (DIODES) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | — | |
| P= | BC847B (DC) BC847B (DIODES) | TO236 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | — | |
| P= | BC847C.235 (NEX-NXP) | TO236 | в ленте 10000 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P= | BC847BLT3G (ONS) | SOT-23-3 | 10000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P= | BC847CLT3G (ONS) | TO236 | 10000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P= | BC847B (NXP) BC847B (DIODES) | TO236 | в ленте 3000 шт |
|  | — | — |  | — |  |  |  | — | — | — | |
| P= | BC847CW (YJ) | SOT-323-3 | в ленте 3000 шт |  | — |  |  |  |  |  |  | — | — | — | ||
| P= | BCW72.235 (NEX-NXP) | TO236 |  |  |  |  | — |  |  |  | — | — | — | |||
| P= | BC847B 1F (FOSAN) | — | — | — | — | — | — | — | — | — | — | — | — | |||
| P= | BC847BHZGT116 (ROHM) | — | 1000 шт | — | — | — | — | — | — | — | — | — | — | — | ||
| P= | BC847B (DIOTEC) BC847B (DIODES) | TO236 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P= | BC847C (MCC) BC847C (DIODES) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC847CW (NXP) | SOT-323-3 | в ленте 3000 шт |  | — | — |  | — |  |  |  | — | — | — | ||
| P= | BC847C (DIOTEC) BC847C (DIODES) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P= | BC847B-TP (MCC) | TO236 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC847A.235 (NEX-NXP) | TO236 |  |  |  |  | — |  |  |  | — | — | — | |||
| P= | BC847C (NXP) BC847C (DIODES) | SOT-23-3 | в ленте 10000 шт |
|  | — |  |  | — |  |  |  | — | — | — | |
| P= | BC847B (DIODES) | TO236 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | NSVBC847BLT3G (ONS) | SOT-23-3 |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | ||
| P= | BC846ALT1G (ONS) | SOT-23-3 | в ленте 3000 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | |
| P= | BC847B-7-F (DIODES) | SOT-23-3 | 200 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC846 (JSCJ) | SOT-23-3 | — | — |  |  |  |  | — |  | — | — | — | |||
| P= | BC847B (MCC) BC847B (DIODES) | TO236 | 1 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC850BW.115 (NEX-NXP) | SC703 | 1 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P= | BC847 (JSCJ) | SOT-23-3 | — | — |  |  |  |  | — |  | — | — | — | |||
| P= | BC847BW (YJ) | SOT-323-3 | в ленте 3000 шт |  | — |  |  |  |  |  |  | — | — | — | ||
| P= | BC847BQ (YJ) | — | — | — | — | — | — | — | — | — | — | — | — | |||
| P= | BC847BMTF (ONS-FAIR) | TO236 | 1 шт | — | — | — | — | — | — | — | — | — | — | — | ||
| P= | BC847BT116 (ROHM) | SOT-23-3 |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | ||
| P= | BC847BW.115 (NEX-NXP) | SC703 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P= | BC847BWT1G (ONS) | SC703 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC847BWT1 (ONS) | — |
|  | — |  |  | — |  |  |  | — | — | General Purpose Transistor NPN | ||
| P= | BC846A.215 (NEX-NXP) | TO236 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — |  | |
| P= | BC847BW-TP (MCC) | SC703 | 1 шт |
|  | — | — |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC847BW-7-F (DIODES) | SOT-323-3 | 1 шт |
|  | — |  |  |  |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC847BW.135 (NEX-NXP) | SC703 |  |  |  |  | — |  |  |  | — | — | — | |||
| P= | BC847CQ (YJ) | — | в ленте 5 шт | — | — | — | — | — | — | — | — | — | — | — | ||
| P= | BC848CW (YJ) | SOT-323-3 | 3000 шт |  | — |  |  |  |  |  |  | — | — | — | ||
| P= | BCX70K.215 (NEX-NXP) | TO236 | в ленте 3000 шт |  |  |  |  | — |  |  |  | — | — | — | ||
| P= | BC850CW.115 (NEX-NXP) | SC703 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P= | BC850C.215 (NEX-NXP) | TO236 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | — | |
| P= | BC847CM.315 (NEX-NXP) | SOT883 | в ленте 10000 шт |  |  |  |  | — |  |  |  | — | — | — | ||
| P= | BC847CW.135 (NEX-NXP) | SC703 | 1 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P= | BC849CW.115 (NEX-NXP) | SC703 | в ленте 3000 шт |
|  |  |  |  | — |  |  |  | — | — | — | |
| P= | BC847CWT1G (ONS) | SOT-323-3 | в ленте 3000 шт |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
| P= | BC847CW-13-F (DIODES) | SOT-23-3 |
|  | — |  |  | — |  |  |  | — | — | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | ||
| P= | BC847W (NXP) | — | 1 шт |  | — | — |  | — |  |  |  | — | — | — |
Файлы
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