EESB5

Omron
Датчик положения оптический - ; Примечания: PHOTOMICROSENSOR, TRANSISTOR; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:30mA; Output Voltage:30V; Opto Case Style:Through Hole; No. of Pins:4; Operating Temperature Range:-25°C to +80°C ;RoHS Compliant: Yes
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Технические характеристики

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  Примечания: PHOTOMICROSENSOR, TRANSISTOR; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:30mA; Output Voltage:30V; Opto Case Style:Through Hole; No. of Pins:4; Operating Temperature Range:-25°C to +80°C ;RoHS Compliant: Yes
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Photomicrosensor (Reflective) EE-SB5(-B) Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Dust-tight construction. • With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. • Mounted with M3 screws. • Model with soldering terminals (EE-SB5). • Model with PCB terminals (EE-SB5-B). Two, 3.2±0.2 dia. holes Optical axis Optical axis ■ Absolute Maximum Ratings (Ta = 25°C) Item 9±0.2 11.5±0.2 Emitter Four, 0.5 Four, 0.25 2.54±0.2 2.54±0.2 7.62±0.3 EE-SB5 EE-SB5-B Detector Internal Circuit A C K Dimensions E 3 < mm ≤ 6 ±0.3 ±0.375 A K C Anode Cathode Collector 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 E Emitter 18 < mm ≤ 30 ±0.65 3 mm max. Rated value IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 80°C Storage Tstg –30°C to 80°C Tsol 260°C (see note 3) Soldering temperature Tolerance Name Terminal No. Ambient temperature Unless otherwise specified, the tolerances are as shown below. Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 200 μA min., 2,000 μA max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflection --- --- λP 850 nm typ. VCE = 10 V Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Emitter Detector Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 166 EE-SB5(-B) Photomicrosensor (Reflective) IF = 30 mA PDF
Документация на EESB5 

Micro Sensing Device Data Book

Дата модификации: 15.06.2009

Размер: 114 Кб

2 стр.

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