MMBV105GLT1G

Технические характеристики

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MMBV105GLT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com • Controlled and Uniform Tuning Ratio • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 Cathode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit VR 30 Vdc Forward Current IF 200 mAdc Device Dissipation @ TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C Rating Reverse Voltage 1 Anode 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM M4EM G G 1 M4E = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBV105GLT1G Package Shipping† SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: MMBV105GLT1/D PDF
Документация на серию MMBV105GLT1 

MMBV105GLT1 - Silicon Tuning Diode

Дата модификации: 22.08.2009

Размер: 112.2 Кб

3 стр.

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