MMG05N60DT1

ON Semiconductor
MOTOROLA Order this document by MMG05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MMG05N60D N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high fre...
развернуть ▼ свернуть ▲
 

Технические характеристики

показать свернуть
Корпус SOT-223
Ток коллектора максимальный при 25°C
Время выключения
Максимальная мощность
Тип входа
Примечание Insulated Gate Bipolar Transistor, 0.5A I(C), 600V V(BR)CES, N-Channel, TO-261
Нашли ошибку? Выделите её курсором и нажмите CTRL + ENTER

Файлы 1

показать свернуть
MOTOROLA Order this document by MMG05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MMG05N60D N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. IGBT 0.5 A @ 25°C 600 V • • • • Built–In Free Wheeling Diode Built–In Gate Protection Zener Diodes Industry Standard Package (SOT223) High Speed Eoff: Typical 6.5 J @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/s • Robust High Voltage Termination • Robust Turn–Off SOA 4 C 1 2 3 1=G 2=4=C 3=E G E CASE 318E–04 STYLE 13 TO–261A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VCGR ± 15 Vdc Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) IC25 IC90 ICM 0.5 0.3 2.0 Adc Total Device Dissipation @ TC = 25°C PD 1.0 Watt TJ, Tstg –55 to 150 °C RθJC RθJA 30 150 °C/W TL 260 °C Parameters Operating and Storage Junction Temperature Range Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) Single Pulse Drain–to–Source Avalanche Energy – Starting @ TC = 25°C Energy – Starting @ TC = 125°C VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25  EAS mJ 125 40 (1) Pulse width is limited by maximum junction temperature repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. REV 3 IGBT  Motorola Motorola, Inc. 1998 Device Data 1 PDF
Документация на MMG05N60DT1 

MMG05N60D

Дата модификации: 29.11.2001

Размер: 97.7 Кб

6 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.

    SKiiP26GH12T4V11 (SMK)