NMLU1210TWG

MOSFET транзистор
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Технические характеристики

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Корпус DFN-8 UDFN8
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Примечание
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Аналоги 25

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
A+ STS8DNF3LL (ST) SO-8 SOIC8 1 шт MOSFET транзистор - [SO-8]; Тип: N; Uси: 30 В; Iс(25°C): 8 А; Rси(вкл): 20...24 мОм; @U...
A+ NTMFS4927NT3G (ONS) DFN-6
 
A+ STL8NH3LL (ST) DFN-8
 
A+ NTMS4872NR2G (ONS) SO-8 8-SOIC MOSFET N-CH 30V 6A 8-SOIC Power MOSFET 30V 10.2A 13.5 mOhm Single N-Channel SO-8
A+ NTMS4840NR2G (ONS) SO-8 8-SOIC MOSFET N-CH 30V 4.5A 8SOIC Power MOSFET 30V 7.5A 24 mOhm Single N-Channel SO-8
A+ NTMS4816NR2G (ONS) SO-8 SOIC8 MOSFET N-CH 30V 6.8A 8-SOIC
A+ NTMS4801NR2G (ONS) SO-8 SOIC8 2500 шт MOSFET N-CH 30V 7.5A 8-SOIC
A+ NTMS4800NR2G (ONS) SO-8 SOIC8 в ленте 2500 шт MOSFET N-CH 30V 4.9A 8-SOIC Power MOSFET 30V 6.4A 27 mOhm Single N-Channel SO-8
A+ NTD5407NT4G (ONS) TO252
 
Power MOSFET 40V 38A 26 mOhm Single N-Channel DPAK
A+ NTMFS4C13NT1G (ONS) DFN-8 TDFN8 1500 шт
 
A+ NTMFS4945NT3G (ONS) 5-DFN (5x6) (8-SOFL)
 
Power MOSFET 30V 35A 9 mOhm Single N-Channel SO-8FL
A+ NTMFS4945NT1G (ONS) 5-DFN (5x6) (8-SOFL)
 
Power MOSFET 30V 35A 9 mOhm Single N-Channel SO-8FL
A+ STS9D8NH3LL (ST) SO-8 SOIC8 MOSFET транзистор - [SO-8]; Тип: N; Uси: 30 В; Iс(25°C): 8 А; Rси(вкл): 25 мОм; @Uзатв(...
A+ NTD4815NT4G (ONS) TO252 1 шт MOSFET N-CH 30V 6.9A DPAK Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
A+ NTMFS4927NT1G (ONS) SO-8 SOIC8 1500 шт
 
A+ NTD4815N-35G (ONS) TO251 MOSFET NCH 30V 6.9A IPAK TRIMMED
A+ NTD4813NT4G (ONS) TO252 MOSFET N-CH 30V 7.6A DPAK Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK
A+ NTD4813NHT4G (ONS) TO252 MOSFET N-CH 30V 40A DPAK
A+ NTD4813NH-35G (ONS) TO251 MOSFET N-CH 30V 7.6A IPAK Power MOSFET 30V 40A 13 mOhm Single N-Channel IPAK Trimmed Leads
A+ NTD4813N-35G (ONS) TO251 75 шт MOSFET N-CH 30V 7.6A IPAK
A+ NTD4813N-1G (ONS) TO251 MOSFET N-CH 30V 7.6A IPAK Power MOSFET 30V 40A 13 mOhm Single N-Channel IPAK
A+ NTMFS4744NT3G (ONS) 5-DFN (5x6) (8-SOFL)
 
Power MOSFET 30V 53A 10 mOhm Single N-Channel SO-8FL
A+ NTMFS4744NT1G (ONS)
 
Power MOSFET 30V 53A 10 mOhm Single N-Channel SO-8FL
A+ NTMD4820NR2G (ONS) SO-8 SOIC8 MOSFET транзистор - [SO-8]; Тип: N; Uси: 30 В; Iс(25°C): 8 А; Rси(вкл): 20...27 мОм; @U...
A+ NTMS4916NR2G (ONS) SO-8 SOIC8 2500 шт MOSFET N-CH 30V 11.4A SO8FL

Файлы 1

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NMLU1210 Full Bridge Rectifier Dual 20 V N−Channel with dual 3.2 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm mCool™ Package Features • • • • • • • • Full−Bridge Rectifier Block Up to 3.2 A operation Low RDS(on) MOSFET to minimize conduction loss Low gate charge MOSFET Low VF Schottky diode Ultra Low Inductance Package This Device uses Halogen−Free Molding Compound These are Pb−Free Devices http://onsemi.com MOSFET RDS(on) TYP V(BR)DSS ID MAX 23 mW @ 4.5 V 20 V 3.2 A 17 mW @ 10 V SCHOTTKY DIODE Applications VR MAX VF TYP IF MAX 20 V 0.45 V 3.2 A • Wireless Charging • AC−DC Rectification • Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Input voltage between two MOSFET drain Value Unit VLL 20 V TJ, TSTG −55 to 125 °C Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Continuous Drain Current R_JA (Note 1) TA = 25°C IO 2.2 A Power Dissipation R_JA (Note 1) TA = 25°C Continuous Drain Current R_JA t < 5 s (Note 1) TA = 25°C Power Dissipation R_JA t < 5 s (Note 1) TA = 25°C Continuous Drain Current R_JA (Note 2) TA = 25°C Bridge Operating Junction and Storage Temperature PD IO PD W 2.34 IO PIN CONNECTIONS Vout Vout Vout L1_1 GND1 W 0.47 GND1 0.185 L1_2 L1_2 PD 1210 AYWWG G 1210 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (*Note: Microdot may be in either location) A 1.16 GND2 GND2 (Top View) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. August, 2013 − Rev. 1 UDFN CASE 517BS 0.6 TA = 85°C © Semiconductor Components Industries, LLC, 2013 Ç ÇÇ 0.94 TA = 85°C TA = 85°C A 3.2 1.88 TA = 85°C TA = 25°C W 1.2 0.47 TA = 85°C MARKING DIAGRAM L1_1 Power Dissipation R_JA (Note 2) 1.16 TA = 85°C RECTIFIER 4.0 4.0 mm mCool Pin Connections (Top View) 1 ORDERING INFORMATION Device Package Shipping† NMLU1210TWG UDFN (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NMLU1210/D PDF
Документация на NMLU1210TWG 

NMLU1210 - Full Bridge Rectifier Dual 20 V N−Channel with dual 3.2 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm uCool Package

Дата модификации: 30.08.2013

Размер: 127.7 Кб

6 стр.

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