NTD4302G

 

Технические характеристики

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Корпус TO252
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Заряд затвора
Рассеиваемая мощность
Примечание Power MOSFET 30V 18.5A 10 mOhm Single N-Channel DPAK
Ёмкость затвора
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Аналоги 4

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
A+ SUD50N04-8m8P-4GE3 (VISHAY) TO252 1 шт MOSFET N-CH 40V 14A TO-252
A+ IRF7809AVTRPBF (INFIN) SO-8 SOIC8 в ленте 4000 шт MOSFET N-CH 30V 13.3A 8-SOIC HEXFET Power MOSFETs Discrete N-Channel
A+ IRF7809AVPBF (INFIN) SO-8 SOIC8 в линейках 95 шт MOSFET N-CH 30V 13.3A 8-SOIC HEXFET Power MOSFETs Discrete N-Channel
A+ NTMFS4835NT1G (ONS) SO-8 SOIC8 1 шт
 

Файлы 1

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NTD4302 MOSFET – Power, N-Channel, DPAK/IPAK 68 A, 30 V Features http://onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature DPAK Mounting Information Provided These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(on) TYP ID MAX 30 V 7.8 mW @ 10 V 68 A D N−Channel Applications G • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery Powered Products: S 4 i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards 4 Rating Drain−to−Source Voltage Symbol Value Unit VDSS 30 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Continuous Drain Current @ TC = 25°C (Note 4) Continuous Drain Current @ TC = 100°C RqJC PD ID ID 1.65 75 68 43 °C/W W A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 3) RqJA PD ID ID IDM 67 1.87 11.3 7.1 36 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 3) RqJA PD ID ID IDM 120 1.04 8.4 5.3 28 °C/W W A A A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25 W) EAS 722 mJ Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 4. Current Limited by Internal Lead Wires. © Semiconductor Components Industries, LLC, 2014 May, 2019 − Rev. 9 1 1 2 1 3 2 3 IPAK CASE 369D (Straight Lead) STYLE 2 DPAK CASE 369C (Surface Mount) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain AYWW T 4302G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) AYWW T 4302G • • • • • • • • 2 1 3 Drain Gate Source A Y WW T4302 G 1 2 3 Gate Drain Source = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTD4302/D PDF
Документация на NTD4302G 

MOSFET – Power, N-Channel, DPAK/IPAK 68 A, 30 V

Дата модификации: 11.11.2020

Размер: 242.1 Кб

8 стр.

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