STK544UC62K-E

STK544UC62K-E Inverter IPM for 3-phase Motor Drive Overview This Inverter IPM (Intelligent Power Module) includes the output stage of a 3-phase inverter, pre-drive circuits, bootstrap circuits, and protection circuits in one package. www.onsemi.com Function  SIP(single in-line package) of the transfer full mold structure.  The emitter line of the each lower phase outputs to an external ter...
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Технические характеристики

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Внутренняя схема
Напряжение К-Э
Рабочий ток при 25°C
Корпус SIP23
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STK544UC62K-E Inverter IPM for 3-phase Motor Drive Overview This Inverter IPM (Intelligent Power Module) includes the output stage of a 3-phase inverter, pre-drive circuits, bootstrap circuits, and protection circuits in one package. www.onsemi.com Function  SIP(single in-line package) of the transfer full mold structure.  The emitter line of the each lower phase outputs to an external terminal with the option of control using 3-phase current detection with external resistors.  Direct input of CMOS level control signals without an insulating circuit is possible.  Protective circuits including over current and pre-drive low voltage protection are built in.  A single power supply drive is enabled through the use of bootstrap circuits for upper IGBT gate drives.  Built-in dead-time for shoot-thru protection.  Internal substrate temperature is measured with an internal pulled up thermistor. Certification  UL1557 (File Number: E339285). Specifications Absolute Maximum Ratings at Tc = 25C Supply voltage Parameter Symbol VCC V+ to VRU(VRV,VRW), surge<500V Conditions Ratings Unit 450 Collector-emitter voltage VCE V V+ to U(V,W) or U(V,W) to VRU(VRV,VRW) 600 V Output current Io Output peak current *1 V+, VRU,VRV,VRW, U,V,W terminal current ±10 A V+, VRU,VRV,VRW, U,V,W terminal current at Tc=100C ±6 A Iop V+, VRU,VRV,VRW, U,V,W terminal current for a pulse width of 1ms ±20 A Pre-driver voltage VD1,2,3,4 VB1 to U, VB2 to V, VB3 to W, VDD to VSS 20 V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 terminals ITRIP terminal voltage VITRIP ITRIP terminal 0.3 to 7 VSS+5 V Maximum power dissipation Pd IGBT per 1 channel 22 W Junction temperature Tj IGBT,FRD 150 C Storage temperature Tstg 40 to +125 C Operating case temperature Tc Tightening torque Withstand voltage Vis *2 V 40 to +100 C Case mounting screws *3 0.9 Nm 50Hz sine wave AC 1 minute *4 2000 VRMS H-IC case temperature Reference voltage is “VSS” terminal voltage unless otherwise specified. *1: Surge voltage developed by the switching operation due to the wiring inductance between V+ and VRU(VRV,VRW) terminals. *2: VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS terminal voltage. *3: Flatness of the heat-sink should be less than 50m to +100m. *4: Test conditions : AC2500V, 1 second. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 15 of this data sheet. © Semiconductor Components Industries, LLC, 2015 October 2015 - Rev. 2 1 Publication Order Number : STK544UC62K-E/D PDF
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