SIA467EDJ-T1-GE3

MOSFET P-CH 12V 31A SC70-6
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Технические характеристики

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Корпус SOT-323-6 SC-70-6
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора
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New Product SiA467EDJ www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A)a 0.0130 at VGS = - 4.5 V - 31 0.0145 at VGS = - 3.7 V - 30 0.0195 at VGS = - 2.5 V - 26 0.0400 at VGS = - 1.8 V -7 Qg (Typ.) 29 nC PowerPAK SC-70-6L-Single APPLICATIONS 1 D • Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing 2 D 3 6 - Battery Switch - Load Switch - Power Management G D 5 S D 2.05 mm S • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg and UIS Tested • Typ ESD Protection: 5000 V (HBM) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S G Marking Code 2.05 mm 4 B1 X Part # code Ordering Information: SiA467EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) XXX D Lot Traceability and Date code P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current - 25 ID - 13b, c - 11b, c Single Avalanche Current Single Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C - 16 IS - 2.9b, c IAS - 11 EAS 5.8 mJ 19 12 PD W 3.5b, c 2.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A - 60 TC = 25 °C Maximum Power Dissipation V - 31 TA = 70 °C Pulsed Drain Current (t = 300 μs) Unit TJ, Tstg - 50 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t5s RthJA 28 36 Steady State RthJC 5.3 6.5 Unit °C/W Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S13-0107-Rev. A, 21-Jan-13 Document Number: 62816 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PDF
Документация на SIA467EDJ-T1-GE3 

Дата модификации: 30.11.-1

Размер: 211 Кб

9 стр.

New Product SiA467EDJ www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A)a 0.0130 at VGS = - 4.5 V - 31 0.0145 at VGS = - 3.7 V - 30 0.0195 at VGS = - 2.5 V - 26 0.0400 at VGS = - 1.8 V -7 Qg (Typ.) 29 nC PowerPAK SC-70-6L-Single APPLICATIONS 1 D • Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing 2 D 3 6 - Battery Switch - Load Switch - Power Management G D 5 S D 2.05 mm S • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg and UIS Tested • Typ ESD Protection: 5000 V (HBM) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S G Marking Code 2.05 mm 4 B1 X Part # code Ordering Information: SiA467EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) XXX D Lot Traceability and Date code P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current - 25 ID - 13b, c - 11b, c Single Avalanche Current Single Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C - 16 IS - 2.9b, c IAS - 11 EAS 5.8 mJ 19 12 PD W 3.5b, c 2.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A - 60 TC = 25 °C Maximum Power Dissipation V - 31 TA = 70 °C Pulsed Drain Current (t = 300 μs) Unit TJ, Tstg - 50 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t5s RthJA 28 36 Steady State RthJC 5.3 6.5 Unit °C/W Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S13-0107-Rev. A, 21-Jan-13 Document Number: 62816 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PDF
Документация на SIA467EDJ-T1-GE3 

Дата модификации: 30.11.-1

Размер: 211 Кб

9 стр.

    Публикации 1

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