New dual n-channel TrenchFET power MOSFET
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SiA936EDJ Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) 0.034 at VGS = 4.5 V 4.5a 0.037 at VGS = 3.7 V 4.5a 0.045 at VGS = 2.5 V 4.5a • TrenchFET® Power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 2000 V (HBM) • 100 % Rg tested • Material categorization: For definitions of compliance please see Qg (TYP.) 5.4 nC PowerPAK® SC-70-6L Dual S2 4 D1 6 G2 5 APPLICATIONS • Portable devices such as smart phones, tablet PCs and mobile computing - Load switch - DC/DC converter - Power management D1 D2 5 0 2. m m m 5m 2.0 Top View 1 3 D2 Bottom View 2 G1 1 S1 D1 D2 G1 Marking Code: CK Ordering Information: SiA936EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) G2 N-Channel MOSFET S1 N-Channel MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 TC = 70 °C 4.5 a ID TA = 25 °C 4.5 a,b,c 4.5 a,b,c TA = 70 °C Pulsed Drain Current (t = 100 μs) IDM TC = 25 °C Continuous Source-Drain Diode Current 20 1.6 b,c TC = 25 °C 7.8 TC = 70 °C 5 PD TA = 25 °C W 1.9 b,c 1.2 b,c TA = 70 °C Operating Junction and Storage Temperature Range A 4.5 a IS TA = 25 °C Maximum Power Dissipation V 4.5 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to 150 Soldering Recommendations (Peak Temperature) d,e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient b,f t5s RthJA 52 65 Maximum Junction-to-Case (Drain) Steady State RthJC 12.5 16 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile ( The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state condition is 110 °C/W. S13-2624-Rev. A, 23-Dec-13 Document Number: 62929 1 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT PDF
Документация на SIA936EDJ-T1-GE3 

Дата модификации: 22.10.2014

Размер: 372.1 Кб

9 стр.

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    26 ноября 2014

    SiA936EDJ - сдвоенный компактный 20V N-MOSFET с низким RDSon

    Vishay Intertechnology представила новый сдвоенный N–канальный TrenchFET силовой MOSFET–транзистор в ультракомпактном, термически улучшенном корпусе PowerPAK SC–70. Разработанный чтобы сэкономить место на плате и увеличить... ...читать

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