SIS412DN-T1-GE3

MOSFET N-CH 30V 12A 1212-8 PPAK
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Технические характеристики

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Корпус POWERPAK12128
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
  Примечание: Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ёмкость затвора
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Аналоги 25

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Тип Наименование Корпус Упаковка i Тип Uси Iс(25°C) RDS on Rси (вкл) Uзатв (ном) Uзатв(макс) Qзатв Pрасс Примечание Cзатв Особенности Карточка
товара
P= SIS412DN (VISHAY) 1 шт
 
A+ STK800 (ST) PolarPak
 
Power Field-Effect Transistor, 20A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A+ STS14N3LLH5 (ST) SO-8 SOIC8 1 шт MOSFET N-CH 30V 14A 8SOIC Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A+ STS13N3LLH5 (ST) SOIC-8-3.9 8-SO
 
Power Field-Effect Transistor, 13A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A+ STS11NF30L (ST) SO-8 SOIC8 2500 шт MOSFET N-CH 30V 11A 8-SOIC Power Field-Effect Transistor, 11A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A+ CSD17555Q5A (TI) DFN-8 TDFN8 2500 шт
 
30V N-ch NexFET Power MOSFET, CSD17555Q5A
A+ CSD17552Q5A (TI) SON8 2500 шт
 
30-V, N-Channel NexFET™ Power MOSFETs
A+ CSD17551Q3A (TI) DFN-8 2500 шт
 
A+ CSD17510Q5A (TI) DFN-8 TDFN8 2500 шт
 
30V N-Channel Low Side NexFET Power MOSFET with 20 Volt Vgs
A+ CSD17507Q5A (TI) SON8 2500 шт
 
30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs
A+ CSD17505Q5A (TI) DFN-8 TDFN8 в ленте 2500 шт
 
30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs
A+ NTMFS4835NT1G (ONS) SO-8 SOIC8 1 шт
 
A+ IRFH3702TRPBF (INFIN) QFN-8 в ленте 4000 шт MOSFET N-CH 30V 16A 8PQFN HEXFET Power MOSFETs Discrete N-Channel
A+ IRF8721PBF (INFIN) SO-8 SOIC8 в линейках 95 шт MOSFET N-CH 30V 14A 8-SOIC HEXFET Power MOSFETs Discrete N-Channel
A+ IRF8714TRPBF (INFIN) SO-8 SOIC8 в ленте 4000 шт MOSFET N-CH 30V 14A 8-SOIC HEXFET Power MOSFETs Discrete N-Channel
A+ IRF7828TRPBF (INFIN) SO-8 SOIC8 в ленте 4000 шт Полевой транзистор.
30V. 13.6A. HEXFET Power MOSFETs Discrete N-Channel
A+ IRF7809AVTRPBF (INFIN) SO-8 SOIC8 в ленте 4000 шт MOSFET N-CH 30V 13.3A 8-SOIC HEXFET Power MOSFETs Discrete N-Channel
A+ IRF7809AVPBF (INFIN) SO-8 SOIC8 в линейках 95 шт MOSFET N-CH 30V 13.3A 8-SOIC HEXFET Power MOSFETs Discrete N-Channel
A+ IRF7413ZTRPBF (INFIN) SO-8 SOIC8 в ленте 4000 шт MOSFET N-CH 30V 13A 8-SOIC HEXFET Power MOSFETs Discrete N-Channel
A+ IRF6613TRPBF (INFIN) DIRECTFETMT 4800 шт
 
HEXFET Power MOSFETs Discrete N-Channel
A+ IRF6604 (INFIN) DIRECTFETMQ 1 шт
 
HEXFET Power MOSFETs Discrete N-Channel
A+ WMS13N03T1 (WAYON) SOP8L в коробках 4000 шт
 
A+ WMR13N03T1 (WAYON) DFN62X2 в ленте 3000 шт
 
A+ SUD50N04-8m8P-4GE3 (VISHAY) TO252 1 шт MOSFET N-CH 40V 14A TO-252 Power Field-Effect Transistor, 14A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
A+ STL11N3LLH6 (ST) POWERFLAT 10 шт
 
Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Файлы 2

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New Product SiS412DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.8 nC APPLICATIONS PowerPAK 1212-8 • Notebook PC S 3.30 mm - System Power - Load Switch 3.30 mm 1 D S 2 S 3 G 4 D 8 G D 7 D 6 D 5 Bottom View S Ordering Information: SiS412DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 12a 12a 8.7b, c 7b, c 30 12a IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 A 2.7b, c 5 mJ 1.25 15.6 10 PD W 3.2b, c 2b, c - 55 to 150 260 TJ, Tstg Soldering Recommendations (Peak Temperature)e, f °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 32 Maximum 39 6.5 8 Unit °C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 81 °C/W. e. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 69006 S09-0135-Rev. C, 02-Feb-09 www.vishay.com 1 PDF
Документация на SIS412DN-T1-GE3 

Дата модификации: 04.11.2011

Размер: 539.7 Кб

13 стр.

New Product SiS412DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 % Rg Tested Qg (Typ.) 3.8 nC APPLICATIONS PowerPAK 1212-8 • Notebook PC S 3.30 mm - System Power - Load Switch 3.30 mm 1 D S 2 S 3 G 4 D 8 G D 7 D 6 D 5 Bottom View S Ordering Information: SiS412DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy ID TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Unit V 12a 12a 8.7b, c 7b, c 30 12a IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 A 2.7b, c 5 mJ 1.25 15.6 10 PD W 3.2b, c 2b, c - 55 to 150 260 TJ, Tstg Soldering Recommendations (Peak Temperature)e, f °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 32 Maximum 39 6.5 8 Unit °C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 81 °C/W. e. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 69006 S09-0135-Rev. C, 02-Feb-09 www.vishay.com 1 PDF
Документация на SIS412DN-T1-GE3 

Дата модификации: 02.01.1970

Размер: 531.9 Кб

13 стр.

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