SMAJ58A

SMAJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 400W DO-214AC (SMA) d e e d en ang t x E eR g a t l Vo Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.177 (4.50) 0.074 MAX. (1.88 MAX.) 0.157 (3.99)...
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Технические характеристики

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Рабочее напряжение
Напряжение ограничения (номинальное)
Максимальное импульсное напряжение
Тип супрессора по свойствам
Примечание Trans Voltage Suppressor Diode, 58V V(RWM), Unidirectional
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Аналоги 27

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
P= SMAJ58A (BOURNS)
SMAJ58A/TR7 (YAG)
DO214AC 1 шт DIODE, TVS, 58V, 400W, UNI, 5%, SMA TVS DIODE 58VWM SMD General Purpose
P= SMAJ58A (YJ)
SMAJ58A/TR7 (YAG)
DO214AC 5000 шт
 
Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
P= SMAJ58A-13-F (DIODES) DO214AC 1 шт
P= SMAJ58A (TSC)
SMAJ58A/TR7 (YAG)
DO214AC 1 шт Защитный диод - [DO-214AC]; Pрасс: 3.3 Вт; Pрасс(пик): 400 Вт; Uраб: 58 В; Uогр(ном): 6...
P= P4SMAJ58A (DIOTEC) DO214AC 1 шт Защитный диод - [DO-214AC]; Pрасс(пик): 400 Вт; Uраб: 58 В; Uогр(диапазон): 64.4...71.5... Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
P= SMAJ58A-E3/5A (VISHAY) DO214AC Защитный диод - Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
P= SMAJ58A+ (MULTCMP) Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon
P= P4SMAJ58A_R1_00001 (PJ) Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
P= SMAJ58A (LTL)
SMAJ58A/TR7 (YAG)
DO214AC в ленте 5000 шт Защитный диод - [DO-214AC, SMA]; Pрасс(пик): 400 Вт; Uраб: 58 В; Uимп(макс): 93.6 В; Iи... Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
P= SMAJ58AHR3G (TSC)
P- SMAJ60AHR3G (TSC)
P- P4SMAJ58 (DIOTEC) Защитный диод - [DO-214AC]; Pрасс(пик): 400 Вт; Uраб: 58 В; Uогр(диапазон): 64.4...78.6... Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
P- P4SMAJ58A-AU_R1_000A1 (PJ)
 
A- SMCJ58A (LTL)
SMCJ58A/TR7 (YAG)
SMCJ58A (ONS-FAIR)
DO-214AB SMC 3000 шт Защитный диод - [DO-214AB, SMC]; Pрасс(пик): 1.5 кВт; Uраб: 58 В; Uимп(макс): 93.6 В; I... Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SMBJ58A (LTL)
SMBJ58A (ONS-FAIR)
DO-214AA SMB в ленте 3000 шт Защитный диод - [DO-214AA, SMB]; Pрасс(пик): 600 Вт; Uраб: 58 В; Uимп(макс): 93.6 В; Iи... Trans Voltage Suppressor Diode, 600W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
A- SMBJ58A (YJ)
SMBJ58A (ONS-FAIR)
DO214AA в ленте 3000 шт Trans Voltage Suppressor Diode, 58V V(RWM), Unidirectional
A- SMAJ58A/TR13 (YAG) DO-214AC DO-214AC (SMA) SMAJ, DO-214AC, 58V, 93.6V, Reel 13"
A- 5KP58A-B (LTL) 100 шт Защитный диод - [P600, Axial]; Pрасс(пик): 5 кВт; Uраб: 58 В; Uимп(макс): 93.6 В; Iимп(... Trans Voltage Suppressor Diode, 5000W, 58V V(RWM), Unidirectional, 1 Element, Silicon
A- TPSMA6L58A (LTL) DO221AC 3000 шт Защитный диод - [DO-221AC, SMA ]; Pрасс(пик): 600 Вт; Uраб: 58 В; Uимп(макс): 93.6 В; I... Trans Voltage Suppressor Diode, 600W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-221AC
A- SMDJ58AHR6G (TSC)
 
A- 5.0SMDJ58A (LTL) DO214AB 3000 шт Защитный диод - [DO-214AB, SMC]; Pрасс(пик): 5 кВт; Uраб: 58 В; Uимп(макс): 93.6 В; Iим... Trans Voltage Suppressor Diode, 5000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SMBJ58CAR5G (TSC) Trans Voltage Suppressor Diode, 600W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
A- PGSMAJ58AR3G (TSC) Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
A- SMCJ58A (TSC)
SMCJ58A/TR7 (YAG)
SMCJ58A (ONS-FAIR)
DO214AB 30 шт Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SMBJ58A (GOOD-ARK)
SMBJ58A (ONS-FAIR)
 
Trans Voltage Suppressor Diode, 600W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
A- SMBJ58A (TSC)
SMBJ58A (ONS-FAIR)
Защитный диод - Trans Voltage Suppressor Diode, 600W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA
A- SMBJ58A (MULTCMP)
SMBJ58A (ONS-FAIR)
 
Trans Voltage Suppressor Diode, 58V V(RWM), Unidirectional, Silicon

Файлы 1

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SMAJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 400W DO-214AC (SMA) d e e d en ang t x E eR g a t l Vo Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.177 (4.50) 0.074 MAX. (1.88 MAX.) 0.157 (3.99) Dimensions in inches and (millimeters) 0.012 (0.305) 0.006 (0.152) 0.060 MIN. (1.52 MIN.) 0.208 (5.28) REF 0.090 (2.29) 0.078 (1.98) Features 0.060 (1.52) 0.008 (0.203) MAX. 0.030 (0.76) 0.208 (5.28) 0.194 (4.93) Mechanical Data Case: JEDEC DO-214AC molded plastic over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.002 oz., 0.064 g Packaging Codes – Options (Antistatic): 51 – 1K per Bulk box, 20K/carton 61 – 1.8K per 7" plastic Reel (12mm tape), 36K/carton 5A – 7.5K per 13" plastic Reel (12mm tape), 75K/carton • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) • Ideal for EFT protection of data lines in accordance with IEC 1000-4-4 (IEC801-4) • Low profile package with built-in strain relief for surface mounted applications • Glass passivated junction • Low incremental surge resistance, excellent clamping capability • 400W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% (300W above 78V) • Very fast response time • High temperature soldering guaranteed: 250°C/10 seconds at terminals Devices for Bidirectional Applications For bi-directional devices, use suffix C or CA (e.g. SMAJ10C, SMAJ10CA). Electrical characteristics apply in both directions. Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Peak pulse power dissipation with a 10/1000µs waveform(1,2) (see fig. 1) Peak pulse current with a waveform(1) Peak forward surge current 8.3ms single half sine-wave uni-directional only(2) Typical thermal resistance, junction to ambient(3) Typical thermal resistance, junction to lead Operating junction and storage temperature range Symbol Value Unit PPPM 400 W IPPM See Next Table A IFSM 40 A RθJA RθJL TJ, TSTG 120 30 –55 to +150 °C/W °C/W °C Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2. Rating is 300W above 78V (2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout Document Number 88390 17-Feb-04 www.vishay.com 1 PDF
Документация на SMAJ5.0A 

Дата модификации: 02.12.2005

Размер: 85.2 Кб

5 стр.

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