SMBJ75CA-E3/52

Vishay
Защитный диод - [DO-214AA]; Pрасс: 5 Вт; Pрасс(пик): 600 Вт; Uраб: 75 В; Uогр(ном): 87 В; Uогр(диапазон): 83.3...95.8 В; Uимп(макс): 121 В
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Технические характеристики

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Корпус DO214AA
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Ток утечки при рабочем напряжении
Тип супрессора по свойствам
Количество линий ограничения
Примечание EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
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Аналоги 7

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
P= SMBJ75CA-TP (MCC)
 
DO-214AA SMB — — — —
P= SMBJ75CA (LTL)
 

SMBJ75CA (ONS-FAIR) 		DO-214AA SMB в ленте 3000 шт Защитный диод - [DO-214AA, SMB]; Pрасс(пик): 600 Вт; Uраб: 75 В; Uимп(макс): 121 В; Iим... — EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
P= SMBJ75CA (TSC)
 

SMBJ75CA (ONS-FAIR) 		DO214AA — — — UL CERTIFIED, EXCELLENT CLAMPING CAPABILITY, E258596
P= SMBJ75CA (JIEJIE)
 

SMBJ75CA (ONS-FAIR) 		— — — — — —
P- SMBJ75CA (YJ)
 

SMBJ75CA (ONS-FAIR) 		DO-214AA SMB в ленте 300 шт — — — — Trans Voltage Suppressor Diode, 75V V(RWM), Bidirectional
P- SMBJ75CA (GOOD-ARK)
 

SMBJ75CA (ONS-FAIR) 		—
 
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P- SMBJ75CA (GWS)
 

SMBJ75CA (ONS-FAIR) 		—
 
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Файлы 2

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SMBJ5.0A thru SMBJ188A www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package Available • Ideal for automated placement • Glass passivated chip junction • Available in unidirectional and bidirectional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % SMB (DO-214AA) Cathode Available • Excellent clamping capability • Very fast response time Anode • Low incremental surge resistance (unidirectional) (bidirectional) LINKS TO ADDITIONAL RESOURCES 3D 3D • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS VBR (bidirectional) 6.4 V to 231 V VBR (unidirectional) 6.4 V to 231 V VWM 5.0 V to 188 V PPPM 600 W PD 5.0 W IFSM (unidirectional only) 100 A TJ max. 150 °C Polarity Unidirectional, bidirectional Package SMB (DO-214AA) DEVICES FOR BIDIRECTION APPLICATIONS For bidirectional devices use CA suffix (e.g. SMBJ10CA). Electrical characteristics apply in both directions. Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for unidirectional types the band denotes cathode end, no marking on bidirectional types TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) PARAMETER PPPM 600 W Peak pulse current with a 10/1000 μs waveform (1) IPPM See next table A Power dissipation on infinite heatsink at TA = 50 °C PD 5.0 W Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2) Operating junction and storage temperature range IFSM 100 A TJ, TSTG -55 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 30-Jun-2021 Document Number: 88392 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PDF
Документация на SMBJ160A-E3/52 

Дата модификации: 04.07.2021

Размер: 121 Кб

6 стр.

SMBJ5.0A thru SMBJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability DO-214AA (SMB J-Bend) • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRIMARY CHARACTERISTICS VBR (bi-directional) 6.4 V to 231 V VBR (uni-directional) 6.4 V to 231 V VWM 5.0 V to 188 V PPPM 600 W IFSM (uni-directional only) 100 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package DO-214AA (SMBJ) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional use CA suffix (e.g. SMBJ10CA). Electrical characteristics apply in both directions. • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types     MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) PPPM (1)(2) 600 W Peak pulse current with a 10/1000 μs waveform IPPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only IFSM (2) 100 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 06-Feb-14 Document Number: 89284 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PDF
Документация на серию SMBJ5.0A 

Дата модификации: 23.09.2016

Размер: 91.7 Кб

5 стр.

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