Серия драйверов FET-IGBT ID5S605

Chipown

Общие характеристики

 Раздел Драйверы FET-IGBT
Корпус SO-8 SOIC8
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Максимальный выходной ток нарастания
Максимальный выходной ток спада
Опции
Рабочая температура

Документация на серию ID5S605

Chipown ID5S605 High Side & Low Side Gate Drive IC General description Features The ID5S605 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.        Package/Order Information Application       Fully operational to +600 V 3.3 V logic compatible dV/dt Immunity ±50 V/nsec Floating channel designed for bootstrap operation Gate drive supply range from 10 V to 20 V UVLO for low side channel Output Source / Sink Current Capability 300 mA / 600mA Matched propagation delay for both channels Small and medium- power motor driver Power MOSFET or IGBT driver Half-Bridge Power Converters Full-Bridge Power Converters Any Complementary Driver Converters 1 VCC 2 HIN VB 8 HO 7 ID5S605 3 LIN VS 6 4 COM LO 5 Order code Package ID5S605SEC-R1 SOP8 Typical Circuit VDC, up to 600V RB BSD CBS 1 VCC VB 8 2 HIN HO 7 15V Q1 ID5S605 3 LIN VS 6 4 COM LO 5 Q2 Load MCU IF Rcs www.chipown.com Wuxi Chipown Microelectronics Limited Rev. 1.0 1/12 PDF
Документация на ID5S605SEC-R1 

Chipown

Дата модификации: 21.09.2023

Размер: 648.2 Кб

12 стр.

    Товары серии ID5S605

    Наименование i Упаковка
    ID5S605SEC-R1 (CHIPOWN)
     
    		в ленте 4000 шт