Серия FET транзисторов BLM3401

Общие характеристики

	Раздел	FET транзисторы
	Конфигурация и полярность
	Максимальное напряжение сток-исток
	Ток стока номинальный при 25°C
	Сопротивление открытого канала (мин)
	Сопротивление открытого канала при диапазоне Uзатв(ном)
	Диапазон номинальных напряжений затвора
	Максимальное напряжение затвора
	Заряд затвора
	Рассеиваемая мощность
	Ёмкость затвора
	Особенности: High Power and current handing capability, Lead free product is acquired, Surface Mount Package, PWM applications, Load switch, Power management

Документация на серию BLM3401

Pb Free Product BLM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The BLM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram ● VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 72mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired Marking and pin Assignment ● Surface Mount Package Application ●PWM applications ●Load switch SOT-23 top view ●Power management Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3401 BLM3401 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit -30 V ±20 V -4.2 A -30 A 1.2 W -55 To 150 ℃ 104 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - V -1 μA Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - Page1 www.belling.com.cn - V2.0  PDF

Документация на BLM3401 

NCE N-Channel Enhancement Mode Power MOSFET

Дата модификации: 11.11.2011

Размер: 283.5 Кб

6 стр.

• найти BLM3401.pdf

Товары серии BLM3401