Серия драйверов FET-IGBT 1EDN7512B

Общие характеристики

Раздел Драйверы FET-IGBT
Корпус SOT235
Кол-во нижних каналов
Максимальный выходной ток нарастания
Максимальный выходной ток спада
Опции Rail-to-rail выход, защита UVLO 4,2В
Рабочая температура

Документация на серию 1EDN7512B

EiceDRIVER™ 1EDN751x/1EDN851x Features Fast, Precise, Strong and Compatible • 5 ns slew rate to support high speed Superjunction MOSFET (like CoolMos™ C7) or GaN devices • 19 ns propagation delay precision for fast MOSFET and GaN switching • 8 A sink and 4 A source driver capability enables fast switching for very high efficiency applications and powers low ohmic MOSFET • Industry standard packages and pinout ease system-design upgrades The New Reference in Ruggedness • 4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal conditions • -10 V input voltage capability delivers robustness and crucial safety margin when device is driven from pulsetransformers • 5 A reverse current robustness eliminates the need for output protection circuitry Applications • Server SMPS (Switch Mode Power Supplies) • TeleCom SMPS • DC-to-DC Converter • Bricks • Power Tools • Industrial SMPS • Motor Control Example Topologies • Synchronous Rectification • Power Factor Correction PFC (DCM, CCM) • LLC, ZVS in combination with pulse transformer for isolation Description The 1EDN7x/1EDN8x is an advanced single-channel driver. It is suited to drive logic and normal level MOSFETs and supports OptiMOSTM, CoolMOSTM, Standard Level MOSFETs, Superjunction MOSFETs, as well as IGBTs and GaN Power devices. Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/1EDN Rev. 2.2 2018-04-20 PDF
Документация на 1EDN7512BXTSA1 

1EDN_4A_8A.book

Дата модификации: 20.04.2018

Размер: 1.14 Мб

28 стр.

EiceDRIVER™ 1EDN751x/1EDN851x Features Fast, Precise, Strong and Compatible • 5 ns slew rate to support high speed Superjunction MOSFET (like CoolMos™ C7) or GaN devices • 19 ns propagation delay precision for fast MOSFET and GaN switching • 8 A sink and 4 A source driver capability enables fast switching for very high efficiency applications and powers low ohmic MOSFET • Industry standard packages and pinout ease system-design upgrades The New Reference in Ruggedness • 4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal conditions • -10 V input voltage capability delivers robustness and crucial safety margin when device is driven from pulsetransformers • 5 A reverse current robustness eliminates the need for output protection circuitry Applications • Server SMPS (Switch Mode Power Supplies) • TeleCom SMPS • DC-to-DC Converter • Bricks • Power Tools • Industrial SMPS • Motor Control Example Topologies • Synchronous Rectification • Power Factor Correction PFC (DCM, CCM) • LLC, ZVS in combination with pulse transformer for isolation Description The 1EDN7x/1EDN8x is an advanced single-channel driver. It is suited to drive logic and normal level MOSFETs and supports OptiMOSTM, CoolMOSTM, Standard Level MOSFETs, Superjunction MOSFETs, as well as IGBTs and GaN Power devices. Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/1EDN Rev. 2.0 2016-10-28 PDF
Документация на 1EDN7512BXTSA1 

1EDN_4A_8A.book

Дата модификации: 02.11.2016

Размер: 1.02 Мб

28 стр.

    Товары серии 1EDN7512B

    Наименование i Упаковка
    1EDN7512BXTSA1 (INFIN) в ленте 3000 шт

    1EDN7512B публикации

    07 июня 2017
    новость

    1EDN - новое семейство драйверов для IGBT, MOSFET и GaN транзисторов

    Компания Infineon выпустила новую линейку драйверов 1EDN для управления затворами любых силовых транзисторов на высоких частотах в схемах высокоэффективных преобразователей мощности. 1EDN7511, 1EDN8511, 1EDN7512 – одноканальные драйверы с... ...читать