Серия IGBT силовых модулей FS225R12KE4

Общие характеристики

Раздел IGBT силовые модули
Внутренняя схема
Кол-во ключей в модуле
Напряжение К-Э
Рабочий ток при 25°C
Технология кристалла
Максимальная рассеиваемая мощность

Документация на серию FS225R12KE4

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS225R12KE4 EconoPACK™+B-SerieModulmitTrench/FeldstoppIGBT4undoptimierterEmitterControlledDiode EconoPACK™+B-seriesmodulewithtrench/fieldstopIGBT4andoptimizedEmitterControlleddiode VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200  V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 95°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom  IC 225 320  PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM  450  A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot  1100  W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VGES  +/-20  V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage min. IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V IC = 225 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 7,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VCE sat A A typ. max. 1,85 2,10 2,15 2,15 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG  1,55  µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint  3,3  Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies  13,0  nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres  0,705  nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES   3,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES   400 nA td on  0,16 0,17 0,18  µs µs µs tr  0,04 0,04 0,04  µs µs µs td off  0,38 0,47 0,50  µs µs µs tf  0,07 0,09 0,10  µs µs µs Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 225 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 225 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 225 A, VCE = 600 V VGE = ±15 V RGoff = 1,6 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 225 A, VCE = 600 V VGE = ±15 V RGoff = 1,6 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 225 A, VCE = 600 V, LS = 80 nH Tvj = 25°C VGE = ±15 V, di/dt = 5750 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,6 Ω Tvj = 150°C Eon  6,80 12,5 15,0  mJ mJ mJ AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 225 A, VCE = 600 V, LS = 80 nH Tvj = 25°C VGE = ±15 V, du/dt = 3400 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,6 Ω Tvj = 150°C Eoff  17,0 26,5 29,5  mJ mJ mJ Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC  Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC   Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT Thermalresistance,casetoheatsink λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH  0,052 TemperaturimSchaltbetrieb Temperatureunderswitchingconditions  Tvj op -40  preparedby:MB dateofpublication:2013-11-04 approvedby:WR revision:2.0 1 tP ≤ 10 µs, Tvj = 150°C 900  A 0,14 K/W K/W 150 °C PDF
Документация на FS225R12KE4BOSA1 

Datenblatt / Datasheet FS225R12KE4 Datenblatt / Datasheet FS225R12KE4 Rev. 2.0 (de / en)

Дата модификации: 04.11.2013

Размер: 644.4 Кб

8 стр.

    Товары серии FS225R12KE4

    Наименование i Упаковка
    FS225R12KE4BOSA1 (INFIN)
     
    4 шт