Серия FET транзисторов IRFHM830PBF

Infineon

Общие характеристики

 Раздел FET транзисторы
Корпус QFN-8
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора

Документация на серию IRFHM830PBF

IRMOSFET™ IRFHM830PbF VDSS 30 V 3.8 m 15 nC Rg (typical) 2.5  ID (@TC (Bottom) = 25°C) 77 A RDS(on) max (@ VGS = 10V) Qg (typical) PQFN 3.3 x 3.3 mm Applications  Battery Operated DC Motor Inverter MOSFET Features Low RDSon (< 3.8m) Low Thermal Resistance to PCB (< 3.4°C/W) 100% Rg tested Low Profile (< 1.0 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFHM830TRPbF IRFHM830TR2PBF PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Multi-Vendor Compatibility  Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Symbol Parameter Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 21 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 17 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V  77 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V  49 IDM Pulsed Drain Current  308 PD @TA = 25°C Power Dissipation  2.7 PD @TC(Bottom) = 25°C Power Dissipation  37 Linear Derating Factor  TJ Operating Junction and TSTG Storage Temperature Range Units V A W W/°C 0.022 -55 to + 150 °C Notes  through  are on page 9 1 Rev. 2.4, 2021-03-17 PDF
Документация на IRFHM830TRPBF 

Datasheet IRFHM830PbF Datasheet IRFHM830PbF Rev. 2.4

Дата модификации: 25.03.2021

Размер: 859.2 Кб

10 стр.

IRFHM830PbF HEXFET® Power MOSFET VDSS 30 V 3.8 m 15 nC Rg (typical) 2.5  ID (@TC (Bottom) = 25°C) 40 A RDS(on) max (@ VGS = 10V) Qg (typical) PQFN 3.3 x 3.3 mm Applications  Battery Operated DC Motor Inverter MOSFET Features Low RDSon (< 3.8m) Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (< 1.0 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFHM830TRPbF IRFHM830TR2PBF PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Multi-Vendor Compatibility  Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 21 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 17 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 40 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 40 IDM Pulsed Drain Current  160 PD @TA = 25°C Power Dissipation  2.7 PD @TC(Bottom) = 25°C Power Dissipation  37 Linear Derating Factor  TJ Operating Junction and TSTG Storage Temperature Range Units V A W 0.022 W/°C -55 to + 150 °C Notes  through  are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015 PDF
Документация на IRFHM830TRPBF 

IRFHM830PbF Product Datasheet

Дата модификации: 30.09.2015

Размер: 532.2 Кб

9 стр.

IRFHM830PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 3.8 mΩ 15 2.5 nC Ω 40h (@Tc(Bottom) = 25°C) 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Low RDSon (<3.8mΩ) Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (<1.0mm) results in ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1,Industrial Qualification Orderable part number IRFHM830TRPBF IRFHM830TR2PBF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice #259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Notes  through 1 g g c g Max. 30 ±20 21 17 40 40 h h 160 2.7 37 0.022 -55 to + 150 Units V A W W/°C °C are on page 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 6, 2014 PDF
Документация на серию IRFHM830PBF 

IRFHM830PbF Product Datasheet

Дата модификации: 11.06.2014

Размер: 244.8 Кб

9 стр.

    Товары серии IRFHM830PBF

    Наименование i Упаковка
    IRFHM830TRPBF (INFIN)
     
    		MOSFET N-CH 30V 21A PQFN в ленте 4000 шт