Серия Светодиод маломощный AP2012SF4

Kingbright

Общие характеристики

 Раздел Светодиод маломощный
Цвета свечения
Количество цветов в корпусе
Длина волны 1 цвета 880
Размер 1.3 мм
Рабочая температура

Документация на серию AP2012SF4

AP2012SF4C 2.0 x 1.25 mm Infrared Emitting Diode DESCRIPTION  PACKAGE DIMENSIONS SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES       2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness Mechanically and spectrally matched to the phototransistor Package : 2000 pcs / reel Moisture sensitivity level: 3 Halogen-free RoHS compliant APPLICATIONS       Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE Part Number AP2012SF4C Emitting Color (Material) Infrared (GaAlAs) Po (mW/sr) @ 20mA [2] Lens Type Water Clear Viewing Angle [1] Min. Typ. 2θ1/2 0.8 1.5 160° Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. © 2021 Kingbright. All Rights Reserved. Spec No: DSAB1077 / 1203000168 Rev No: V.11B Date: 07/12/2021 Page 1 / 4 PDF
Документация на AP2012SF4C 

AP2012SF4C(Ver.11B)

Дата модификации: 21.07.2021

Размер: 478.2 Кб

4 стр.

    Товары серии AP2012SF4

    Наименование i Упаковка U αX αY Корпус
    AP2012SF4C (KGB)
     
     
    AP2012SF4C-P22 (KGB)