Серия Светодиод маломощный APTD2012SF4

Общие характеристики

	Раздел	Светодиод маломощный
	Цвета свечения
	Количество цветов в корпусе
	Длина волны 1 цвета	880
	Падение напряжения, тип.
	Угол по горизонтали
	Угол по вертикали
	Тип корпуса
	Размер	0.8 мм
	Рабочая температура

Документация на серию APTD2012SF4

APTD2012SF4C 2.0 x 1.25 mm Infrared Emitting Diode DESCRIPTION z PACKAGE DIMENSIONS SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES z z z z z 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness Mechanically and spectrally matched to the phototransistor Package : 3000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS z z z z z z Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.15(0.006") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE Part Number APTD2012SF4C Emitting Color (Material) Lens Type Infrared (GaAlAs) Water Clear Po (mW/sr) @ 20mA [2] Viewing Angle [1] Min. Typ. 2θ1/2 0.8 2 40° Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. © 2018 Kingbright. All Rights Reserved. Spec No: DSAP5545 / 1203015875 Rev No: V.2B Date: 10/12/2018 Page 1 / 4  PDF

Документация на APTD2012SF4C 

APTD2012SF4C(Ver.2B)

Дата модификации: 12.10.2018

Размер: 279.5 Кб

4 стр.

• найти APTD2012SF4.pdf

Товары серии APTD2012SF4