Серия фототранзисторов KPA-3010P3

Общие характеристики

	Раздел	Фототранзистор
	λ максимальной чувствительности
	Спектральная область чувствительности
	Поле зрения
	Максимальный ток коллектора

Документация на серию KPA-3010P3

KPA-3010P3C 3.0 mm x 1.0 mm Right Angle Phototransistor DESCRIPTION
PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES





3.0 x 2.0 x 1.0 mm right angle SMD LED, 1.0 mm thickness Mechanically and spectrally matched to the infrared emitting LED lamp Package: 2000 pcs / reel Moisture sensitivity level: 3 Tinned pads for improved solderability RoHS compliant APPLICATIONS



g in K t h g i r b Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.15(0.006") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V 100 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Power Dissipation at(or below) 25°C Free Air Temperature Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2019 Kingbright. All Rights Reserved. Spec No: DSAB1638 / 1203000589 Rev No: V.20 Date: 05/08/2019 Page 1 / 4  PDF

Документация на KPA-3010P3C 

KPA-3010P3C(Ver.20)

Дата модификации: 08.05.2019

Размер: 800.1 Кб

4 стр.

• найти KPA-3010P3.pdf

Товары серии KPA-3010P3