Серия Светодиод маломощный LTE-32B3S

Общие характеристики

	Раздел	Светодиод маломощный
	Цвета свечения
	Количество цветов в корпусе
	Длина волны 1 цвета	940
	Мощность ИК излучения
	Угол по горизонтали
	Тип корпуса
	Тип линзы
	Размер	ø5.4×7.6 мм
	Рабочая температура

Документация на серию LTE-32B3S

Infrared Emitter LTE-32B3S-ED 1. Description LTE-32B3 series is an infrared, 940nm emitting diode with high radiant power. It is molded in T-1¾package with a water clear lens. It has a wide radiation angle which are desirable for remote controller or space detection application. 1. 1. Features ◼ ◼ ◼ ◼ ◼ ◼ Lead (Pb) free product and RoHS compliant. Peak wavelength: 940nm Viewing angle: 50° 1.2. Applications ◼ ◼ ◼ Infrared radiation source for cameras Remote controller Sensor technology High radiant intensity Good spectral matching to Si Photodetectors Clear transparent package 2. Outline Dimensions Notes : 1. 2. 3. 4. All dimensions are in millimeters (inches). Tolerance is ±0.25mm (.010") unless otherwise noted. Protruded resin under flange is 1.5mm (.059") max. Lead spacing is measured where the leads emerge from the package. 2023-07-25 1/5 Part No. : LTE-32B3S-ED BNS-OD-FC002/A4 (RDR)  PDF

Документация на LTE-32B3S-ED 

Дата модификации: 06.12.2023

Размер: 216.4 Кб

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• найти LTE-32B3S.pdf

Товары серии LTE-32B3S