Серия Светодиод маломощный LTE-R38386AS

Общие характеристики

	Раздел	Светодиод маломощный
	Цвета свечения
	Количество цветов в корпусе
	Длина волны 1 цвета	850
	Мощность ИК излучения
	Угол по горизонтали
	Тип корпуса
	Размер	3.85×3.85×2.24 мм
	Рабочая температура

Документация на серию LTE-R38386AS

Infrared Emitter LTE-R38386AS-Q-ED 1. Description Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wireless data transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed and wide viewing angels. The product line includes GaAs 940nm IREDs, AlGaAs high speed 850nm IREDs, PIN Photodiodes and Phototransistors. Photodiodes and Phototransistors can be provided with a filter that reduces digital light noise in the sensor function, which enables a high signal-to-noise ratio. 1. 1. Features n n n n High power LED light source Peak wavelength 850nm Package type: surface mount Meet ROHS, Green Product 1.2. Applications n n Infrared emitter PCB Mounted Infrared Sensor 2. Outline Dimensions Notes : 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1mm (.004") unless otherwise noted. 3. Specifications are subject to change without notice. 1/6 Part No. : LTE-R38386AS-Q-ED BNS-OD-FC 002/A4  PDF

Документация на LTE-R38386AS-Q-ED 

Дата модификации: 06.12.2023

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