Серия выпрямительных диодов LBAS16WT1

LRC

Общие характеристики

 Раздел Выпрямительные диоды
Корпус SOT-323-3
Схема включения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Время обратного восстановления диодов
Рабочая температура

Документация на серию LBAS16WT1

LESHAN RADIO COMPANY, LTD. Silicon Switching Diode LBAS16WT1G S-LBAS16WT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 MAXIMUM RATINGS (TA = 25oC) Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit RθJA 0.625 °C/mW Rating Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range 2 SC-70 3 CATHODE 1 ANODE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) DEVICE MARKING LBAS16WT1G= A6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max — — — — 715 855 1000 1250 — — — 1.0 50 30 Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF mV Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Capacitance (VR = 0, f = 1.0 MHz) CD — 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) (Figure 1) trr — 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2) QS — 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR — 1.75 V µA ORDERING INFORMATION Device Marking Shipping LBAS16WT1G S-LBAS16WT1G A6 3000/Tape&Reel LBAS16WT3G S-LBAS16WT3G A6 10000/Tape&Reel Rev.A 1/4 PDF
Документация на LBAS16WT1G 

C:\Documents and Settings\lg\My

Дата модификации: 20.08.2012

Размер: 123.3 Кб

4 стр.

LBAS16WT1G S-LBAS16WT1G Silicon Switching Diode 1. FEATURES ● We declare that the material of product compliance with SC70(SOT-323) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 3 CATHODE 2. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LBAS16WT1G A6 3000/Tape&Reel LBAS16WT3G A6 10000/Tape&Reel 1 ANODE 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 µs) Symbol Limits Unit VR IR IFSM 75 200 500 V mA mA Symbol Limits Unit 200 mW 1.6 mW/℃ RθJA 0.625 ℃/mW TJ , Tstg -55~+150 ℃ 4. THERMAL CHARACTERISTICS Parameter Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate(10 x 8 x 0.6 mm) Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate(10 x 8 x 0.6 mm) Junction and Storage Temperature Leshan Radio Company, LTD. Rev.B Apr. 2018 PD 1/5 PDF
Документация на LBAS16WT1G 

Дата модификации: 02.01.1970

Размер: 267.1 Кб

5 стр.

    Товары серии LBAS16WT1

    Наименование i Упаковка
    LBAS16WT1G (LRC)