Серия выпрямительных диодов LBAS516T1

Общие характеристики

	Раздел	Выпрямительные диоды
	Корпус	SOD-523
	Схема включения диодов
	Максимальное обратное напряжение диода
	Прямой ток диода (средний)
	Прямое падение напряжения
	Обратный ток диода
	Время обратного восстановления диодов
	Рабочая температура

Документация на серию LBAS516T1

LBAS516T1G S-LBAS516T1G High-speed Diode 1. FEATURES ● We declare that the material of product compliance with SOD523(SC-79) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Ultra small plastic SMD package ● High switching speed: max. 4 ns ● Continuous reverse voltage: max. 100 V ● Repetitive peak reverse voltage: max. 100 V ● Repetitive peak forward current: max. 500 mA. 2. APPLICATIONS ● High-speed switching in e.g. surface mounted circuits. 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS516T1G 6 3000/Tape&Reel LBAS516T5G 6 8000/Tape&Reel 4. MAXIMUM RATINGS(In accordance with the Absolute Maximum Rating System IEC134) Parameter Symbol VRRM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current Unit V VR Limit 100 100 IF 250 mA IFRM 500 mA 4 A 1 A 0.5 A Tstg -65~+150 ℃ Tj 150 ℃ V non-repetitive peak forward current(square wave; Tj=25°C prior to surge) (t =1µs) IFSM (t =1ms ) (t =1s) storage temperature junction temperature 5. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Symbol Unit 200 mW 1.6 625 mW/ºC ºC/W PD FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Limits RΘJA Junction–to–Ambient(Note 1) 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.D Nov. 2022 1/4  PDF

Документация на LBAS516T1G 

Дата модификации: 10.11.2022

Размер: 375 Кб

5 стр.

LBAS516T1G S-LBAS516T1G High-speed Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring SOD523(SC-79) unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Ultra small plastic SMD package ● High switching speed: max. 4 ns ● Continuous reverse voltage: max. 100 V ● Repetitive peak reverse voltage: max. 100 V ● Repetitive peak forward current: max. 500 mA. 2. APPLICATIONS ● High-speed switching in e.g. surface mounted circuits. 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS516T1G 6 3000/Tape&Reel LBAS516T5G 6 8000/Tape&Reel 4. MAXIMUM RATINGS(In accordance with the Absolute Maximum Rating System IEC134) Parameter Symbol VRRM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current Unit V VR Limit 100 100 IF 250 mA IFRM 500 mA 4 A 1 A 0.5 A Tstg -65~+150 ℃ Tj 150 ℃ V non-repetitive peak forward current(square wave; Tj=25°C prior to surge) (t =1µs) IFSM (t =1ms ) (t =1s) storage temperature junction temperature 5. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Symbol Unit 200 mW 1.6 625 mW/ºC ºC/W PD FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Limits RΘJA Junction–to–Ambient(Note 1) 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.C Aug. 2019 1/4  PDF

Документация на LBAS516T1G 

Дата модификации: 02.01.1970

Размер: 271.8 Кб

4 стр.

• найти LBAS516T1.pdf

Товары серии LBAS516T1