Серия биполярных транзисторов LBC846

Общие характеристики

	Раздел	Биполярный транзистор
	Тип проводимости и конфигурация
	Напряжение КЭ максимальное
	Ток коллектора
	Граничная рабочая частота
	Корпус	SOT-323-6 SOT363

Документация на серию LBC846

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site LBC846ALT1G S-LBC846ALT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage 1 Symbol VCEO SOT–23 VEBO 1 B ASE Vdc 6.0 6.0 5.0 IC 100 2 EMIT T ER mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg –55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 3 COLLECT OR Vdc 80 50 30 LBC846 LBC847, LBC850 LBC848, LBC849 Collector Current – Continuous Vdc VCBO LBC846 LBC847, LBC850 LBC848, LBC849 Emitter–Base Voltage 2 Unit 65 45 30 LBC846 LBC847, LBC850 LBC848, LBC849 Collector–Base Voltage Value xx 1 2 xx= Device Marking (See Table Below) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.A 1/13

Документация на LBC846ALT1G

Дата модификации: 08.03.2013

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Товары серии LBC846

Наименование	i	Упаковка	P_расс	U_КЭ(пад)	h 21
LBC846ALT1G (LRC)
LBC846BDW1T1G (LRC)
LBC846BLT1G (LRC)		1 шт
LBC846BPDW1T1G (LRC)		в ленте 3000 шт