Серия изоляторов цифровых сигналов NSI8121

Novosense

Общие характеристики

 Раздел Изоляторы цифровых сигналов
Кол-во передатчиков
Кол-во приемников
Скорость передачи данных
Максимальная задержка сигнала
Диапазон напряжений питания
Рабочая температура

Документация на серию NSI8121

NSi8120/NSi8121/NSi8122 High Reliability Dual-Channel Digital Isolators Datasheet (EN) 2.3 Product Overview The NSi812x devices are high reliability dual-channel digital isolator. The NSi812x device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi812x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 150kV/us. The NSi812x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi812x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. AEC-Q100 (Grade 1) option is provided for all devices. Key Features  Up to 5000Vrms Insulation voltage  Date rate: DC to 150Mbps  Power supply voltage: 2.5V to 5.5V  All devices are AEC-Q100 qualified  High CMTI: 150kV/us  RoHS-compliant packages: SOP8 narrow body SOW16 wide body Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 F Applications  Industrial automation system  Isolated SPI, RS232, RS485  General-purpose multichannel isolation  Motor control Device Information Part Number NSI812xNx Package SOP8 Body Size 4.90mm ×3.90mm NSI812xWx SOW16 10.30mm × 7.50mm Functional Block Diagrams  Chip level ESD: HBM: ±6kV  High system level EMC performance: Enhanced system level ESD, EFT, Surge immunity  Default output high level or low level option Figure 1. NSi812xN Block Diagram  Isolation barrier life: >60 years  Low power consumption: 1.5mA/ch (1 Mbps)  Low propagation delay: <15ns  Operation temperature: -40℃~125℃ Copyright © 2020, NOVOSENSE Figure 2. NSi812xW Block Diagram Page 1 PDF
Документация на NSI8120D0 

Copyright © 2019, NOVOSENSE Keywords:

Дата модификации: 16.12.2021

Размер: 4.61 Мб

21 стр.

    Товары серии NSI8121

    Наименование i Упаковка Корпус Изоляция
    NSI8121N0 (NOVOSENS)
     
     
    		 в ленте 10 шт SO-8 SOIC8
    NSI8121N0Q (NOVOSENS)
     
    		SO-8 SOIC-8
    NSI8121N1 (NOVOSENS)
     
     
    		 1 шт SO-8 SOIC8
    NSI8121N1Q (NOVOSENS)
     
    		SO-8 SOIC8
    NSi8121W0 (NOVOSENS)
     
     
    		 —
    NSI8121W0Q (NOVOSENS)
     
     
    		 —
    NSi8121W1 (NOVOSENS)
     
     
    		 —
    NSI8121W1Q (NOVOSENS)
     
     
    		 SO-16 SOIC16