Серия изоляторов цифровых сигналов NSI8130

Novosense

Общие характеристики

 Раздел Изоляторы цифровых сигналов
Кол-во передатчиков
Кол-во приемников
Скорость передачи данных
Максимальная задержка сигнала
Диапазон напряжений питания
Рабочая температура
Корпус SO-16 SOIC16

Документация на серию NSI8130

NSi8130/NSi8131: High Reliability Triple-Channel Digital Isolators Datasheet (EN) 1.2 EN TI The NSi813x devices are high reliability triple-channel digital isolators. The NSi813x device is safety certified by UL1577 support several insulation withstand voltages (3.75kVrms,5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi813x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 150kV/us. The NSi813x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi813x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. AEC-Q100 (Grade 1) option is provided for all devices. AL Product Overview Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11(DIN VDE V 0884-11):2017-01 ID Key Features Applications  Industrial automation system  Date rate: DC to 150Mbps  Isolated SPI, RS232, RS485  Power supply voltage: 2.5V to 5.5V  General-purpose multichannel isolation NF  Up to 5000Vrms Insulation voltage  All devices are AEC-Q100 qualified  High CMTI: 150kV/us  Chip level ESD: HBM: ±6kV  Motor control Functional Block Diagrams CO  High system level EMC performance: Enhanced system level ESD, EFT, Surge immunity  Default output high level or low-level option  Isolation barrier life: >60 years 16 VDD2 VDD1 1 16 VDD2 GND1 2 15 GND2 2 15 GND2 INA 3 14 OUTA INA 3 14 OUTA INB 4 13 OUTB INB 4 13 OUTB INC 5 12 OUTC OUTC 5 VDD1 1  Low power consumption: 1.5mA/ch (1 Mbps) NC 6  Low propagation delay: <15ns NC 7  Operation temperature: -40℃~125℃  RoHS-compliant packages: GND1 8 NSi8130 GND1 12 INC 11 NC NC 6 11 NC 10 EN2 EN1 7 10 EN2 9 GND2 GND1 8 NSi8131 9 GND2 Figure 1. NSi813x Block Diagrams SOIC-16 narrow body SOIC-16 wide body Copyright © 2019, NOVOSENSE Page 1 PDF
Документация на NSI8130N0 

Copyright © 2019, NOVOSENSE Keywords:

Дата модификации: 22.04.2024

Размер: 1.55 Мб

20 стр.

    Товары серии NSI8130

    Наименование i Упаковка Изоляция
    NSI8130N0 (NOVOSENS)
     
     
    NSI8130N0Q (NOVOSENS)
     
     
    NSI8130N1 (NOVOSENS)
     
     
    NSi8130N1Q (NOVOSENS)
     
     
    NSi8130W0 (NOVOSENS)
     
     
    NSI8130W0Q (NOVOSENS)
     
     
    NSI8130W1 (NOVOSENS)
     
     
    NSI8130W1Q (NOVOSENS)