Серия выпрямительных диодов 1N5711

STMicroelectronics

Общие характеристики

 Раздел Выпрямительные диоды
Схема включения диодов
Максимальное обратное напряжение диода
Прямой ток диода (средний)
Прямое падение напряжения
Особенности
Обратный ток диода
Время обратного восстановления диодов
Емкость перехода
Рабочая температура

Документация на серию 1N5711

1N5711 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request DO-35 ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Value 70 V Forward Continuous Current* Ta = 25°C 15 mA Ptot Power Dissipation* Ta = 25°C 430 mW Tstg Tj Storage and Junction Temperature Range - 65 to 200 - 65 to 200 °C TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 °C IF Repetitive Peak Reverse Voltage Unit THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* Value Unit 400 °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit VBR Tamb = 25°C IR = 10µA VF * * Tamb = 25°C IF = 1mA 0.41 Tamb = 25°C IF = 15mA 1 Tamb = 25°C VR = 50V 0.2 µA Max. Unit 2 pF 100 ps IR * * 70 V V DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. C Tamb = 25°C VR = 0V f = 1MHz τ Tamb = 25°C IF = 5mA Krakauer Method Typ. * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2001 - Ed: 1B 1/3 PDF
Документация на 1N5711 

Small signal Schottky diode

Дата модификации: 12.10.2001

Размер: 42 Кб

3 стр.

1N5711 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request DO-35 ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Value 70 V Forward Continuous Current* Ta = 25°C 15 mA Ptot Power Dissipation* Ta = 25°C 430 mW Tstg Tj Storage and Junction Temperature Range - 65 to 200 - 65 to 200 °C TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 °C IF Repetitive Peak Reverse Voltage Unit THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Value Unit 400 Junction-ambient* °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit VBR Tamb = 25°C IR = 10µA VF * * Tamb = 25°C IF = 1mA 0.41 Tamb = 25°C IF = 15mA 1 Tamb = 25°C VR = 50V 0.2 µA Max. Unit 2 pF 100 ps IR * * 70 V V DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. C Tamb = 25°C VR = 0V f = 1MHz τ Tamb = 25°C IF = 5mA Krakauer Method Typ. * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2001 - Ed: 1B 1/3 PDF
Документация на серию 1N5711 

Small signal Schottky diode

Дата модификации: 12.10.2001

Размер: 42 Кб

3 стр.

    Товары серии 1N5711

    Наименование i Упаковка Корпус
    1N5711 (ST)
     
    		4000 шт DO35
    1N5711 PBF (ST)
     
    		DO-204AH