Серия FET транзисторов STS12NF30

STMicroelectronics

Общие характеристики

	Раздел	FET транзисторы
	Корпус	SO-8 SOIC8
	Конфигурация и полярность
	Максимальное напряжение сток-исток
	Ток стока номинальный при 25°C, без учета ограничений корпуса
	Сопротивление открытого канала (мин)
	Диапазон номинальных напряжений затвора
	Заряд затвора
	Рассеиваемая мощность
	Ёмкость затвора

Документация на серию STS12NF30

STS12NF30L N-channel 30 V, 0.008 Ω, 12 A STripFET™ II Power MOSFET in SO-8 package Datasheet — production data Features Order code VDSS RDS(on) ID STS12NF30L 30 V < 0.009 Ω 12 A 7 6 ) s t( 5 8 ■ Standard outline for easy automated surface mount assembly ■ Low threshold drive ro eP Applications ■ c u d t e l o Switching application Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. ) (s s b O Figure 1. 2 3 4 1 SO-8 Internal schematic diagram t c u d o r P e t e l o s b O AM11195v1 Table 1. Device summary Order code Marking Package Packaging STS12NF30L 12F30L SO-8 Tape and reel March 2012 This is information on a product in full production. Doc ID 6069 Rev 10 1/13 www.st.com 13

Документация на STS12NF30L

N-channel 30 V, 0.008 , 12 A STripFET™ II Power MOSFET in SO-8 package

Дата модификации: 19.01.2018

Размер: 526.6 Кб

13 стр.

STS12NF30L N-channel 30 V, 0.008 Ω, 12 A STripFET™ II Power MOSFET in SO-8 package Datasheet — production data Features Order code VDSS RDS(on) ID STS12NF30L 30 V < 0.009 Ω 12 A 7 6 5 8 ■ Standard outline for easy automated surface mount assembly ■ Low threshold drive 2 3 4 1 Applications ■ SO-8 Switching application Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Figure 1. Internal schematic diagram AM11195v1 Table 1. Device summary Order code Marking Package Packaging STS12NF30L 12F30L SO-8 Tape and reel March 2012 This is information on a product in full production. Doc ID 6069 Rev 10 1/13 www.st.com 13

Документация на STS12NF30L

N-channel 30 V, 0.008 , 12 A STripFET™ II Power MOSFET in SO-8 package

Дата модификации: 14.03.2012

Размер: 521.2 Кб

13 стр.

найти STS12NF30.pdf

Товары серии STS12NF30

Наименование	i	Упаковка
STS12NF30L (ST)		1 шт