Серия стабилитронов 1N4747

Taiwan Semiconductor

Общие характеристики

 Раздел Стабилитроны
Корпус DO204AL
Напряжение стабилизации
Ток стабилизации (макс)
Импеданс (макс)

Документация на серию 1N4747

1N4740A – 1M200Z Taiwan Semiconductor 1W, 10V - 200V Zener Diode FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Glass passivated chip junction Low profile package Built-in strain relief Low inductance Typical IR less than 5μA above 11V RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT VZ 10 - 200 V Test current IZT 1.2 - 25 mA Ptot 1 W TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die ● For general purpose regulation and protection applications MECHANICAL DATA ● ● ● ● ● ● Case: DO-204AL (DO-41) Molding compound meets UL 94V-0 flammability rating Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.300g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Power dissipation at TA = 50°C Derate above 50°C VALUE UNIT 1 W 6.67 mW/°C TJ -55 to +150 °C TSTG -55 to +150 °C Ptot (1) Operating junction temperature range Storage temperature range Note: 1. Mounted on Cu-Pad size 5mm x 5mm 1 Version: O2104 PDF
Документация на 1M150Z 

Дата модификации: 21.04.2021

Размер: 443.3 Кб

8 стр.

    Товары серии 1N4747

    Наименование i Упаковка T раб
    1N4747A (TSC)
     

    1N4747A (ONS-FAIR)
     
    		 5000 шт
    1N4747AR0 (TSC)